ssm6k24fe TOSHIBA Semiconductor CORPORATION, ssm6k24fe Datasheet - Page 3

• Manufacturer Part Number: ssm6k24fe
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1600
1400
1200
1000
200
180
160
140
120
100
400
350
300
250
200
150
100
800
600
400
200
80
60
40
20
50
0
0
0
-60 -40 -20
0
0
Common Source
200
VGS=4.5V
0.2
Drain-Source voltage VDS (V)
Ambient temperature Ta (°C)
400
5.0
2.5V
0
4.0
Drain current ID (mA)
RDS(ON) - ID
600
RDS(ON) - Ta
20 40 60 80 100 120 140 160
3.0
2.0
0.4
ID - VDS
1.8
800 1000 1200 1400 1600
VGS=4.5V,ID=500mA
Common Source
Ta=25°C
0.6
Common Source
Ta=25°C
2.5V,250mA
VGS=1.4V
0.8
1.6
1
3
10000
1000
0.01
100
0.1
10
0.8
0.6
0.4
0.2
400
350
300
250
200
150
100
1
50
1
0
0
-60 -40 -20 0
0
0
Ta=100°C
1
Gate-Source voltage VGS (V)
2
Gate-Source voltage VGS (V)
Ambient temperature Ta (°C)
-25°C
3
1
20 40 60 80 100 120 140 160
RDS(ON) - VGS
25°C
4
ID - VGS
Vth - Ta
5
25°C
SSM6K24FE
Common Source
VDS=3V
Common Source
ID=0.1mA
VDS=3V
Common Source
ID=500mA
6
2
2007-11-01
7
Ta=100°C
8
-25°C
9
3
10