ssm6p41fe TOSHIBA Semiconductor CORPORATION, ssm6p41fe Datasheet
ssm6p41fe
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ssm6p41fe Summary of contents
Page 1
... Precaution Let V be the voltage applied between gate and source that causes the drain current (I th SSM6P41FE). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. ...
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... -2 Ω off = 720 mA DSF OUT (c) V OUT V 2 SSM6P41FE Min Typ. Max ⎯ ⎯ -20 ⎯ ⎯ -12 ⎯ ⎯ -10 ⎯ ⎯ ±1 ⎯ -0.3 -1.0 ⎯ ⎯ (Note2) 850 ⎯ (Note2) 0.25 0.30 ⎯ ...
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... Common Source 1 25°C 1.0 0.8 0.6 0 100 °C 0.2 − 25 ° (V) GS -1.0 - -1.5 V -0.5 0 100 −50 150 3 SSM6P41FE I – Common Source 100 °C 25 °C − 25 °C -1.0 Gate-source voltage V ( – (ON) D Common Source Ta = 25°C -1.5 V -1.8 V -2.5 V VGS = -4.5 V ...
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... C iss 100 10 C oss C rss 1 -10 -100 (V) DS 250 200 150 100 150 2 3 *:Total Rating 4 SSM6P41FE I – Common Source =100 °C 25 °C −25 °C 0.2 0.4 0.6 0.8 1.0 Drain-source voltage V ( – ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6P41FE 2009-06-25 ...