ssm6p41fe TOSHIBA Semiconductor CORPORATION, ssm6p41fe Datasheet

ssm6p41fe

Manufacturer Part Number

ssm6p41fe

Description

Toshiba Field Effect Transistor Silicon P Channel Mos Type

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.SSM6P41FE.pdf (5 pages)

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○ Power Management Switches

•

Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common)

Marking

Handling Precaution

protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come

into direct contact with devices should be made of anti-static materials.

Precaution

SSM6P41FE). Then, for normal switching operation, V

th.

When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is

Let V

Take this into consideration when using the device.

1.5-V drive

Low ON-resistance : R

Drain-source voltage

Gate-source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of

Note 1: Total rating

This relationship can be expressed as: V

be the voltage applied between gate and source that causes the drain current (I

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

PP3

Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm

Characteristic

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

: R

Pulse

= 1.04 Ω (max) (@V

= 0.67 Ω (max) (@V

= 0.44 Ω (max) (@V

= 0.30 Ω (max) (@V

SSM6P41FE

Symbol

GSS

DSS

(Note1)

stg

GS(off)

Equivalent Circuit

< V

= -1.5 V)

= -1.8 V)

= -2.5 V)

= -4.5 V)

GS(on)

−55 to 150

Rating

-1440

< V

-720

150

-20

±8

GS(on).

must be higher than V

× 6)

Unit

°C

(top view)

Weight: 3.0 mg (typ.)

JEDEC

JEITA

TOSHIBA

th,

ES6

and V

GS(off)

) to be low (-1mA for the

1.Source1

2.Gate1

3.Drain2

1.2±0.05

SSM6P41FE

1.6±0.05

must be lower than

2-2N1D

2009-06-25

―

4.Source2

5.Gate2

6.Drain1

Unit: mm

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ssm6p41fe Summary of contents

Page 1

... Precaution Let V be the voltage applied between gate and source that causes the drain current (I th SSM6P41FE). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. ...

Page 2

... -2 Ω off = 720 mA DSF OUT (c) V OUT V 2 SSM6P41FE Min Typ. Max ⎯ ⎯ -20 ⎯ ⎯ -12 ⎯ ⎯ -10 ⎯ ⎯ ±1 ⎯ -0.3 -1.0 ⎯ ⎯ (Note2) 850 ⎯ (Note2) 0.25 0.30 ⎯ ...

Page 3

... Common Source 1 25°C 1.0 0.8 0.6 0 100 °C 0.2 − 25 ° (V) GS -1.0 - -1.5 V -0.5 0 100 −50 150 3 SSM6P41FE I – Common Source 100 °C 25 °C − 25 °C -1.0 Gate-source voltage V ( – (ON) D Common Source Ta = 25°C -1.5 V -1.8 V -2.5 V VGS = -4.5 V ...

Page 4

... C iss 100 10 C oss C rss 1 -10 -100 (V) DS 250 200 150 100 150 2 3 *:Total Rating 4 SSM6P41FE I – Common Source =100 °C 25 °C −25 °C 0.2 0.4 0.6 0.8 1.0 Drain-source voltage V ( – ...

Page 5

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6P41FE 2009-06-25 ...

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