ssm6p41fe TOSHIBA Semiconductor CORPORATION, ssm6p41fe Datasheet - Page 3

• Manufacturer Part Number: ssm6p41fe
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

(Q1, Q2 Common)
0.2
1.4
1.2
-1.6
-1.4
-1.2
-0.8
-0.6
-0.4
-0.2
1.0
0.8
0.6
0.4
0.8
0.6
0.4
0.2
-1
0
0
1
0
−50
0
0
Common Source
-200 mA / -2.5 V
-0.2
Gate-source voltage V
Drain-source voltage V
Ambient temperature Ta (°C)
-2
0
-100 mA / -1.8 V
R
-8 V
DS (ON)
R
-0.4
-4.5 V
DS (ON)
I
D
– V
50
-4
– V
I D = -400 mA / V GS = -4.5 V
DS
-2.5 V
25 °C
-0.6
– Ta
GS
GS
I D = -100 mA
Common Source
Ta = 25°C
DS
-50 mA / -1.5 V
Common Source
100
-6
-1.8 V
(V)
Ta = 25 °C
VGS=-1.2 V
-0.8
(V)
Ta = 100 °C
− 25 °C
-1.5 V
150
-1.0
-8
3
-0.0001
-0.001
-0.01
-0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-1.0
-0.5
-10
-1
0
0
−50
0
0
-1.5 V
VGS = -4.5 V
-1.8 V
-2.5 V
Common Source
Ta = 25°C
Common Source
V DS = -3 V
25 °C
Gate-source voltage V
Ta = 100 °C
Ambient temperature Ta (°C)
Drain current I
0
-500
R
DS (ON)
I
D
V
− 25 °C
– V
th
-1.0
50
– Ta
GS
– I
D
D
-1000
(mA)
GS
Common Source
V DS = -3 V
I D = -1 mA
SSM6P41FE
100
(V)
2009-06-25
-1500
-2.0
150