sia950dj Vishay, sia950dj Datasheet

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sia950dj

Manufacturer Part Number
sia950dj
Description
Dual N-channel 190-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Document Number: 64712
S09-0142-Rev. A, 02-Feb-09
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
PRODUCT SUMMARY
V
DS
190
PowerPAK SC-70-6 Dual
2.05 mm
6
(V)
D
1
5
G
2
D
1
4
3.8 at V
4.2 at V
S
S
17 at V
1
2
1
R
D
DS(on)
G
2
1
2
GS
GS
GS
Ordering Information: SiA950DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
2.05 mm
= 1.8 V
D
= 4.5 V
= 2.5 V
(Ω)
J
2
3
= 150 °C)
Dual N-Channel 190-V (D-S) MOSFET
I
D
0.95
0.9
0.3
(A)
Part # code
a
d, e
A
Q
= 25 °C, unless otherwise noted
1.4 nC
g
Marking Code
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
New Product
C E X
X X X
Lot Traceability
and Date code
Symbol
FEATURES
APPLICATIONS
T
• Halogen-free According to IEC 61249-2-21
• LITTLE FOOT
• New Thermally Enhanced PowerPAK
• DC/DC Converter for Portable Devices
J
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
SC-70 Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
Load Switch for Portable Devices
stg
®
G
1
Power MOSFET
N-Channel MOSFET
- 55 to 150
0.47
0.38
0.47
1.9
1.2
Limit
± 16
0.95
0.76
0.95
190
260
1
7
5
b, c
b, c
b, c
b, c
b, c
D
S
1
1
Vishay Siliconix
G
®
2
SiA950DJ
N-Channel MOSFET
www.vishay.com
Unit
D
S
°C
W
V
A
2
2
1

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sia950dj Summary of contents

Page 1

... 2. Ordering Information: SiA950DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SiA950DJ Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter b, f Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes ° Surface Mounted on 1" x 1" FR4 board See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC- leadless package. The end of the lead terminal is exposed copper (not plated result of the singulation process in manufacturing ...

Page 3

... 0.5 A, dI/dt = 100 A/µ °C, unless otherwise noted thru 150 120 = 2 4 0.6 0.8 1.0 SiA950DJ Vishay Siliconix Min. Typ. Max ° 0.5 0 °C C 0.3 0 ° 125 °C C 0.0 0.0 0.5 1.0 1.5 V ...

Page 4

... SiA950DJ Vishay Siliconix TYPICAL CHARACTERISTICS 0. 0.0 0.5 1.0 1 Total Gate Charge (nC) g Gate Charge 150 °C J 0.1 0.01 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product = 25 °C, unless otherwise noted A 2 ...

Page 5

... DS(on) Safe Operating Area, Junction-to-Ambient 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiA950DJ Vishay Siliconix 100 µ 100 1000 is specified 100 125 T - Case Temperature (° ...

Page 6

... SiA950DJ Vishay Siliconix TYPICAL CHARACTERISTICS T 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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