sia950dj Vishay, sia950dj Datasheet - Page 3

• Manufacturer Part Number: sia950dj
• Description: Dual N-channel 190-v D-s Mosfet
• Manufacturer: Vishay

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS T
Document Number: 64712
S09-0142-Rev. A, 02-Feb-09
SPECIFICATIONS T
Parameter
Drain-Source Body Diode Characteristics
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
6
5
4
3
2
0.0
0
1
On-Resistance vs. Drain Current
V
0.2
GS
2
V
DS
Output Characteristics
= 1.8 V
- Drain-to-Source Voltage (V)
3
J
I
D
= 25 °C, unless otherwise noted
- Drain Current (A)
0.4
4
5
V
GS
0.6
6
= 2.5 V
Symbol
V
A
GS
Q
7
t
t
t
= 25 °C, unless otherwise noted
rr
a
b
rr
= 5 thru 2 V
V
0.8
V
8
GS
GS
= 4.5 V
= 1 V
9
New Product
I
F
= 0.5 A, dI/dt = 100 A/µs, T
1.0
10
Test Conditions
150
120
0.5
0.4
0.3
0.2
0.1
0.0
90
60
30
0
J
0.0
= 25 °C
0
C
rss
10
V
V
0.5
Transfer Characteristics
DS
Min.
GS
C
C
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
iss
T
C
Capacitance
= 125 °C
20
Typ.
45
45
21
24
1.0
T
Vishay Siliconix
C
T
= 25 °C
C
30
= - 55 °C
SiA950DJ
Max.
70
70
www.vishay.com
1.5
40
Unit
nC
ns
ns
2.0
50
3