sia950dj Vishay, sia950dj Datasheet - Page 4

• Manufacturer Part Number: sia950dj
• Description: Dual N-channel 190-v D-s Mosfet
• Manufacturer: Vishay

SiA950DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.01
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.1
10
- 50
8
6
4
2
0
1
0.0
0.0
- 25
I
Source-Drain Diode Forward Voltage
D
= 0.47 A
0.5
0.2
T
J
V
= 150 °C
SD
0
Q
Threshold Voltage
g
- Source-to-Drain Voltage (V)
1.0
T
0.4
- Total Gate Charge (nC)
J
25
Gate Charge
- Temperature (°C)
V
DS
1.5
50
0.6
= 95 V
I
D
75
= 250 µA
2.0
0.8
A
T
= 25 °C, unless otherwise noted
100
J
V
DS
= 25 °C
= 152 V
2.5
1.0
125
New Product
150
3.0
1.2
2.4
2.0
1.6
1.2
0.8
0.4
15
20
10
0.001
5
0
8
7
6
5
4
3
2
- 50
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
On-Resistance vs. Junction Temperature
I
- 25
D
V
0.01
= 0.36 A
GS
1
= 4.5 V; 2.5 V; I
V
GS
T
0
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
0.1
25
2
Pulse (s)
D
50
1
S09-0142-Rev. A, 02-Feb-09
= 0.36 A
V
GS
Document Number: 64712
3
75
= 1.8 V; I
10
100
T
T
J
J
D
= 125 °C
= 25 °C
4
= 0.15 A
100
125
150
5
1000