ssm3k302t TOSHIBA Semiconductor CORPORATION, ssm3k302t Datasheet - Page 3

• Manufacturer Part Number: ssm3k302t
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

150
100
200
300
250
200
150
100
50
50
0
0
5
4
3
2
1
0
−50
0
0
Common Source
10 V
Gate–source voltage V
0.2
Drain–source voltage V
2
Ambient temperature Ta (°C)
0
4.0 V
R
DS (ON)
R
0.4
4
DS (ON)
2.5 V
I
D
Ta = 100 °C
– V
50
– V
DS
I D = 2.0 A / V GS = 4.0 V
– Ta
0.6
GS
6
25 °C
Common Source
Ta = 25°C
I D = 0.5 A
Common Source
Ta = 25°C
− 25 °C
GS
0.5 A / 1.8 V
1.0 A / 2.5 V
100
DS
0.8
VGS = 1.5 V
8
(V)
(V)
1.8 V
150
10
1
3
0.0001
0.001
150
100
200
0.01
50
0.1
1.0
0.5
10
0
1
0
−50
0
0
Common Source
V
Common source
V DS = 3 V
I D = 1 mA
Gate–source voltage V
Common Source
Ta = 25°C
DS
= 3 V
Ambient temperature Ta (°C)
1
VGS = 4.0 V
Ta = 100 °C
1.8 V
0
2.5 V
Drain current I
R
DS (ON)
2
I
D
V
– V
th
50
1.0
– Ta
− 25 °C
GS
– I
3
D
GS
D
25 °C
(A)
100
(V)
SSM3K302T
4
2007-11-01
2.0
150
5