ssm3j135tu TOSHIBA Semiconductor CORPORATION, ssm3j135tu Datasheet

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ssm3j135tu

Manufacturer Part Number
ssm3j135tu
Description
Toshiba Field-effect Transistor Silicon P-channel Mos Type U-mos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number
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Quantity
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Part Number:
ssm3j135tu(TE85L)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
○ Power Management Switch Applications
Absolute Maximum Ratings
Marking
1.5 V drive
Low ON-resistance:R
Drain-Source voltage
Gate-Source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on FR4 board.
1
temperature/current/voltage
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm
JJN
Characteristic
3
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
Semiconductor
2
temperature/current/voltage,
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DC
Pulse
= 260 mΩ (max) (@V
= 180 mΩ (max) (@V
= 132 mΩ (max) (@V
= 103 mΩ (max) (@V
SSM3J135TU
Reliability
I
I
P
and
(Ta = 25°C)
D
DP
D
Symbol
V
V
(Note 1)
(Note 1)
T
T
(Note 2)
GSS
DSS
t < 1s
stg
ch
Equivalent Circuit
the
1
significant
etc.)
Handbook
GS
GS
GS
GS
−55 to 150
3
= -1.5 V)
= -1.8 V)
= -2.5 V)
= -4.5 V)
Rating
1000
-3.0
-6.0
500
150
-20
± 8
2
are
1
)
2
change
within
(“Handling
Unit
mW
°C
°C
V
V
A
(top view)
the
in
Weight: 6.6mg (typ.)
UFM
JEDEC
JEITA
TOSHIBA
SSM3J135TU
2-2U1A
2010-11-24
1: Gate
2: Source
3: Drain
Unit: mm

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ssm3j135tu Summary of contents

Page 1

... T 150 ch −55 to 150 °C T stg and the significant change etc.) are within the Reliability Handbook (“Handling 2 ) Equivalent Circuit (top view SSM3J135TU 1: Gate 2: Source 3: Drain UFM in JEDEC ― JEITA ― 2-2U1A TOSHIBA Weight: 6.6mg (typ.) 2010-11-24 Unit: mm ...

Page 2

... GS ( OUT (ON) (c) V OUT requires a higher voltage than V GS (on) GS (off) vary depending on board material, board area, board thickness D 2 SSM3J135TU Min Typ. Max ⎯ ⎯ -20 ⎯ ⎯ .(Note 4) -15 ⎯ ⎯ -1 ⎯ ⎯ ±1 ⎯ -0.3 -1.0 ⎯ ...

Page 3

... Common Source Ta = 25°C Pulse test 300 200 Ta = 100 °C 100 -25 ° (V) -1.0 -0.5 0 −50 150 3 SSM3J135TU I – -25 °C -1.0 -2.0 Gate–source voltage V ( – (ON) D -1.5 V -1.8V -2 -4.5 V -2.0 -4.0 -6.0 Drain current I ( – Ta ...

Page 4

... Ta =100 °C 0.01 0.001 -10 0 10000 t off 1000 C iss t f 100 oss 10 C rss -100 -0.001 ( SSM3J135TU I – -25 °C Common Source Pulse test D 25 ° 0.5 1.0 1.5 Drain–source voltage V ( – Common Source - ...

Page 5

... Cu Pad : 0. 0.001 0.01 0 Pulse Width t (s) w 1000 Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm 800 a 600 400 200 ×3) 0 100 600 -40 -20 Ambient temperature Ta (°C) 5 SSM3J135TU P – 100 120 140 160 2010-11-24 ...

Page 6

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM3J135TU 2010-11-24 ...

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