ssm3j135tu TOSHIBA Semiconductor CORPORATION, ssm3j135tu Datasheet - Page 4

• Manufacturer Part Number: ssm3j135tu
• Description: Toshiba Field-effect Transistor Silicon P-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
300
100
0.3
0.1
10
30 Common Source
10
-0.1
3
1
-0.01
-8
-6
-4
-2
0
Ta = 25 °C
f = 1 MHz
V GS = 0 V
0
Common Source
V DS = -3 V
Ta = 25°C
Pulse test
Common Source
I D = -2.0 A
Ta = 25°C
Drain-source voltage V
V DD = - 10 V
2
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
Drain current I
-1
-0.1
C – V
|Y
V DD = - 16 V
4
fs
| – I
DS
D
D
6
-10
-1
DS
(A)
(V)
C oss
C rss
C iss
8
-100
-10
10
4
10000
0.001
1000
0.01
100
0.1
10
10
1
1
-0.001
0
t on
t r
t off
t f
Ta =100 °C
Drain–source voltage V
-0.01
Drain current I
0.5
I
DR
t – I
-25 °C
25 °C
-0.1
– V
D
DS
SSM3J135TU
D
1.0
Common Source
V DD = -10 V
V GS = 0 to -2.5 V
Ta = 25 °C
R G = 4.7Ω
DS
V GS = 0 V
Pulse test
Common Source
G
(A)
-1
2010-11-24
(V)
S
D
I
DR
-10
1.5