ssm3j09fu TOSHIBA Semiconductor CORPORATION, ssm3j09fu Datasheet - Page 2

• Manufacturer Part Number: ssm3j09fu
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Switching Time Test Circuit
Precaution
this product. For normal switching operation, V
lower voltage than V
(relationship can be established as follows: V
V
Please take this into consideration for using the device.
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note 2: Pulse test
(a) Test circuit
th
can be expressed as voltage between gate and source when low operating current value is I
−4 V
0
V
D.U. < = 1%
Input: t
(Z
Common Source
Ta = 25°C
DD
out
10 μs
Characteristics
= −5 V
= 50 Ω)
r
, t
f
< 5 ns
Turn-on time
Turn-off time
th
Input
.
(Ta = 25°C)
Output
V
V
DD
R
Symbol
(BR) DSS
DS (ON)
⏐Y
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
rss
iss
th
fs
⏐
GS (off)
GS (on)
V
I
V
V
V
I
I
I
V
V
V
V
V
D
D
D
D
(b) V
(c) V
GS
DS
DS
DS
DS
DS
DS
DD
GS
< V
= −1 mA, V
= −100 mA, V
= −100 mA, V
= −100 mA, V
= −30 V, V
= −5 V, I
= −5 V, I
= −5 V, V
= −5 V, V
= −5 V, V
requires higher voltage than V
= ±16 V, V
= −5 V, I
= 0~−4 V
th
2
IN
OUT
< V
Test Condition
GS (on)
D
D
D
GS
GS
GS
GS
GS
= −0.1 mA
= −100 mA
DS
= −100 mA,
GS
GS
GS
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0
= 0
= −10 V
= −4 V
= −3.3 V
)
V
DS (ON)
−4 V
V
0 V
DD
(Note2)
(Note2)
(Note2)
(Note2)
th
−1.1
115
Min
−30
t
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
on
and V
10%
t
r
90%
10%
GS
Typ.
2.1
3.3
4.0
22
14
85
85
⎯
⎯
⎯
⎯
⎯
5
SSM3J09FU
D
(off) requires
= −100 μA for
t
2007-11-01
90%
off
−1.8
Max
2.7
4.2
6.0
±1
−1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
f
Unit
mS
μA
μA
pF
pF
pF
ns
ns
Ω
V
V