ssm3j09fu TOSHIBA Semiconductor CORPORATION, ssm3j09fu Datasheet - Page 4

• Manufacturer Part Number: ssm3j09fu
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−1.8
−1.6
−1.4
−1.2
−0.8
−0.6
−0.4
−0.2
−2
−1
500
100
200
150
100
0
10
50
−25
−0.1
1
0
0
20
0
Drain-Source voltage V DS (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
40
25
−1
60
50
Mounted on FR4 board
(25.4 mm × 25.4 mm ×1.6 t
Cu pad: 0.6 mm
C – V
V
P
th
D
80
– Ta
– Ta
75
DS
100
Common Source
I D = −0.1 mA
V DS = −5 V
−10
100
2
Common Source
V GS = 0 V
f = 1 MHz
Ta = 25°C
× 3) Figure 1
120
125
140
C oss
C rss
C iss
150
−100
160
4
−500
−400
−300
−200
−100
5000
1000
100
10
0
−1
0
G
t f
0.2
t on
Common Source
V GS = 0
Ta = 25°C
t r
t off
Drain-Source voltage V DS (V)
0.4
Drain current I D (mA)
D
S
−10
I
I DR
DR
0.6
t – I
– V
D
0.8
DS
−100
Common Source
V DD = −5 V
V GS = 0~−4 V
Ta = 25°C
1
SSM3J09FU
1.2
2007-11-01
−1000
1.4