nte58npn ETC-unknow, nte58npn Datasheet
nte58npn
Manufacturer Part Number
nte58npn
Description
Silicon Complementary Transistors High Power Audio Output
Manufacturer
ETC-unknow
Datasheet
1.NTE58NPN.pdf
(2 pages)
Features:
D High Power Dissipation
D Wide Safe Operating Area
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Continuous Base Current, I
Total Device Dissipation (T
Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector–Emitter Breakdown Voltage
Maximum Collector Cutoff Current
Maximum Emitter Cutoff Current
DC Forward Current Transfer Ratio
Collector–Emitter Saturation Voltage
Second Breakdown Collector Current
Cutoff Frequency
Parameter
Silicon Complementary Transistors
EBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
FL
B
CEO
NTE58 (NPN) & NTE59 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
High Power Audio Output
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
= +25 C unless otherwise specified)
(BR)CEO
I
CE(sat)
I
CBO
h
EBO
I
S/b
f
FE
T
C
I
V
V
V
I
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
CB
EB
CE
CE
CE
= 50mA
= 10A, I
= 6V, I
= 200V, I
= 4V, I
= 100V, t = 1sec
= 12V, I
Test Conditions
B
C
C
= 1A
E
= 0
= 8A
E
= 1A
= 0
Min
200
20
–
–
–
1
–
Typ
20
–
–
–
–
–
–
–55 to +150 C
Max
0.1
0.1
2.5
–
–
–
–
+150 C
200W
Unit
MHz
200V
200V
mA
mA
V
V
A
17A
6V
5A
Related parts for nte58npn
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Light Emitting Diode Water Clear, High Efficiency Red
Manufacturer:
NTE [NTE Electronics]
Datasheet:
Part Number:
Description:
Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output
Manufacturer:
NTE [NTE Electronics]
Datasheet:
Part Number:
Description:
Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver
Manufacturer:
NTE [NTE Electronics]
Datasheet:
Part Number:
Description:
Silicon Complementary Transistors General Purpose High Gain Amplifier
Manufacturer:
NTE [NTE Electronics]
Datasheet:
Part Number:
Description:
Silicon Npn Transistorgeneral Purpose For Medium Power Applications
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Led Displays
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Mosfet N?channel, Enhancement Mode High Speed Switch To220sis Type Package
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Integrated Circuit 7?channel Darlington Array/driver
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Stud Mount Standard Recoverysilicon Rectifiers, 3 Amp
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Zener Diode, 1/2 Watt?5% Tolerance
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Manufacturer:
ETC-unknow
Datasheet:
nte58npn Summary of contents
Page 1
Silicon Complementary Transistors Features: D High Power Dissipation D Wide Safe Operating Area Absolute Maximum Ratings: (T Collector–Base Voltage, V CBO Collector–Emitter Voltage, V Emitter–Base Voltage, V EBO Continuous Collector Current, I Continuous Base Current, I Total Device Dissipation (T ...
Page 2
.215 (5.48) Collector connected to Tab .843 (21.42) .788 (20.02) Min .118 (3.0) .244 (6.2) Max ...