2sd1821a Panasonic Corporation of North America, 2sd1821a Datasheet
2sd1821a
Manufacturer Part Number
2sd1821a
Description
Silicon Npn Epitaxial Planer Type For High Breakdown Voltage Low-frequency And Low-noise Amplification
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1821A.pdf
(3 pages)
Transistors
2SD1821, 2SD1821A
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2003
• High collector-emitter voltage (Base open) V
• Low noise voltage NV
• S-Mini type package, allowing downsizing of the equipment and
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SD1821
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Noise voltage
automatic insertion through the tape packing and the magazine
packing.
2. * : Rank classification
Parameter
Rank
Parameter
h
FE
130 to 220
2SD1821
2SD1821A
2SD1821A
2SD1821
2SD1821A
*
Q
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
I
P
CBO
I
T
V
V
CEO
EBO
a
CP
I
stg
C
CE(sat)
C
NV
C
h
CBO
185 to 330
j
f
CEO
EBO
= 25°C
FE
T
ob
R
−55 to +150
CEO
Rating
I
I
V
V
I
V
V
V
R
C
E
C
150
185
150
185
100
150
150
g
CB
CE
CB
CB
CE
50
= 100 µA, I
= 10 µA, I
= 30 mA, I
5
= 100 kΩ, Function = FLAT
SJC00228CED
= 10 V, I
= 5 V, I
= 10 V, I
= 100 V, I
= 10 V, I
C
C
Conditions
C
Unit
B
E
mW
E
B
= 10 mA
°C
°C
= 0
V
V
V
A
A
E
= −10 mA, f = 200 MHz
= 1 mA, G
= 3 mA
= 0, f = 1 MHz
= 0
= 0
V
= 80 dB
Marking Symbol:
10°
0.3
(0.65) (0.65)
+0.1
–0.0
1
3
1.3
2.0
• 2SD1821: P
• 2SD1821A: L
±0.1
±0.2
Min
150
185
130
2
5
Typ
150
150
2.3
SMini3-G1 Package
Max
330
1
1
0.15
EIAJ: SC-70
1: Base
2: Emitter
3: Collector
+0.10
–0.05
Unit: mm
MHz
Unit
mV
µA
pF
V
V
V
1
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2sd1821a Summary of contents
Page 1
... Function = FLAT g R 185 to 330 SJC00228CED +0.10 +0.1 0.15 0.3 –0.05 –0 (0.65) (0.65) 1.3 ±0.1 2.0 ±0.2 10° 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: • 2SD1821: P • 2SD1821A: L Min Typ Max 150 185 5 1 130 330 1 150 2 150 Unit: mm Unit V V µA V MHz ...
Page 2
... 240 200 160 120 120 160 ( °C ) Ambient temperature T a CE(sat) C 100 = 75° 25°C −25°C 0.1 0.01 0 100 ( mA ) Collector current I C MHz = 25° ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...