2sd1823g Panasonic Corporation of North America, 2sd1823g Datasheet
2sd1823g
Manufacturer Part Number
2sd1823g
Description
Small Signal Bipolar Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1823G.pdf
(4 pages)
Transistors
2SD1823G
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
• High forward current transfer ratio h
• Low collector-emitter saturation voltage V
• High emitter-base voltage (Collector open) V
• Low noise voltage NV
• S-Mini type package, allowing downsizing of the equipment
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
and automatic insertion through the tape packing and the maga-
zine packing.
2. * : Rank classification
Parameter
Rank
Parameter
h
FE
This product complies with the RoHS Directive (EU 2002/95/EC).
400 to 800
*
R
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
FE
T
V
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
I
I
600 to 1 200
stg
C
CE(sat)
C
h
CBO
j
CEO
f
CBO
CEO
EBO
= 25°C
FE
T
CE(sat)
S
−55 to +150
EBO
Rating
I
I
I
V
V
V
I
V
C
C
E
C
100
150
150
CB
CE
CE
CB
50
40
15
50
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 10 mA, I
SJC00375AED
= 20 V, I
= 10 V, I
= 20 V, I
= 10 V, I
1 000 to 2 000
B
T
C
E
Conditions
Unit
B
mW
B
C
E
E
mA
mA
= 0
°C
°C
= 0
= 0
V
V
V
= 1 mA
= 0
= 0
= 2 mA
= −2 mA, f = 200 MHz
■ Package
• Code
• Marking Symbol: 1Z
• Pin Name
SMini3-F2
1: Base
2: Emitter
3: Collector
Min
400
50
40
15
0.05
Typ
120
2 000
Max
0.20
0.1
1
MHz
Unit
µA
µA
V
V
V
V
1
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2sd1823g Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1823G Silicon NPN epitaxial planar type For low-frequency amplification ■ Features • High forward current transfer ratio h • Low collector-emitter saturation voltage V • High emitter-base voltage (Collector open) V • Low noise voltage NV • ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1823G 200 160 120 120 160 ( °C ) Ambient temperature T a CE(sat) C 100 = 75° 25°C 0.1 −25°C 0.01 0 100 ( mA ) Collector current I C ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 2.00 ±0.20 +0.05 0.30 − 0. (0.65) (0.65) 1.30 ±0.10 (5°) Unit: mm +0.05 0.13 − 0.02 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...