hn58x2508fpie Renesas Electronics Corporation., hn58x2508fpie Datasheet - Page 14

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hn58x2508fpie

Manufacturer Part Number
hn58x2508fpie
Description
Electrically Erasable And Programmable Read Only Memory
Manufacturer
Renesas Electronics Corporation.
Datasheet

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HN58X2508I/HN58X2516I
Read from Memory Array (READ):
As shown in the following figure, to send this instruction to the device, chip select (S) is first driven low. The bits of
the instruction byte and the address bytes are then shifted in, on serial data input (D). The addresses are loaded into an
internal address register, and the byte of data at that address is shifted out, on serial data output (Q).
If chip select (S) continues to be driven low, the internal address register is automatically incremented, and the byte of
data at the new address is shifted out.
When the highest address is reached, the address counter rolls over to zero, allowing the Read cycle to be continued
indefinitely. The whole memory can, therefore, be read with a single READ instruction.
The Read cycle is terminated by driving chip select (S) high. The rising edge of the chip select (S) signal can occur at
any time during the cycle. The addressed first byte can be any byte within any page. The instruction is not accepted,
and is not executed, if a Write cycle is currently in progress.
Read from Memory Array (READ) Sequence
Note:
Address Range Bits
Address bits
Notes: 1. b15-b11 are don’t care on the HN58X2516
Rev.3.00, Jul.05.2005, page 14 of 20
W
C
D
Q
S
1. Depending on the memory size, as shown in the following table, the most significant address bits are don’t
2. b15-b10 are don’t care on the HN58X2508
care.
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
Device
0
1
2
Instruction
3
4
A10 to A0
5
High-Z
6
7
A15
8
A14
9 10
HN58X2516I
16-Bit Address
A13
A3
20 21 22 23 24 25 26 27 28 29 30 31
A2
A1
A0
7
6
5
Data Out 1
A9 to A0
4
3
2
1
HN58X2508I
0
7
Data Out 2

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