2sb1219a Panasonic Corporation of North America, 2sb1219a Datasheet
2sb1219a
Manufacturer Part Number
2sb1219a
Description
Silicon Pnp Epitaxial Planer Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SB1219A.pdf
(3 pages)
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Transistors
2SB1219, 2SB1219A
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD1820 and 2SD1820A
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
• Large collector current I
• S-Mini type package, allowing downsizing of the equipment and auto-
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SB1219
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
matic insertion through the tape packing and the magazine packing.
2. * 1: Pulse measurement
* 2: Rank classification
Note) Product of no-rank is not classified and have no marking symbol for rank.
Marking
symbol
Parameter
Parameter
Rank
h
FE1
2SB1219
2SB1219A
2SB1219
2SB1219A
2SB1219A
C
2SB1219
2SB1219A
2SB1219
2SB1219A
* 1
* 1
* 1
a
85 to 170
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
h
I
P
CQ
DQ
CBO
I
T
V
V
V
CEO
EBO
a
CP
I
Q
stg
FE1
h
C
CE(sat)
BE(sat)
C
C
CBO
j
f
CBO
CEO
EBO
FE2
= 25°C
T
ob
* 2
−55 to +150
Rating
I
I
I
V
V
V
I
I
V
V
−500
C
C
E
C
C
−30
−60
−25
−50
150
150
CB
CE
CE
CB
CB
−5
−1
= −10 µA, I
= −2 mA, I
= −10 µA, I
= −300 mA, I
= −300 mA, I
120 to 240
SJC00072CED
= −10 V, I
= −10 V, I
= −10 V, I
= −20 V, I
= −10 V, I
DR
CR
R
Conditions
Unit
mW
B
mA
°C
°C
E
C
E
V
V
V
A
C
C
E
E
= 0
= 0
= 0
B
B
= 50 mA, f = 200 MHz
= 0
= −150 mA
= −500 mA
= 0, f = 1 MHz
= −30 mA
= −30 mA
170 to 340
CS
DS
S
Marking Symbol:
10°
0.3
85 to 340
(0.65) (0.65)
No-rank
+0.1
–0.0
• 2SB1219: C
• 2SB1219A: D
1
3
1.3
2.0
C
D
±0.1
±0.2
Min
−30
−60
−25
−50
−5
85
40
2
− 0.35 − 0.60
−1.1
Typ
200
6
SMini3-G1 Package
− 0.1
Max
−1.5
340
15
0.15
EIAJ: SC-70
+0.10
–0.05
1: Base
2: Emitter
3: Collector
Unit: mm
MHz
Unit
µA
pF
V
V
V
V
V
1
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2sb1219a Summary of contents
Page 1
... SJC00072CED Unit: mm +0.10 +0.1 0.15 0.3 –0.05 –0 (0.65) (0.65) 1.3 ±0.1 2.0 ±0.2 10° 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: • 2SB1219: C • 2SB1219A: D Min Typ Max −30 −60 −25 −50 −5 − 0.1 85 340 40 − 0.35 − 0.60 −1.1 −1.5 200 6 15 No-rank 85 to 340 C D Unit ...
Page 2
... 240 200 160 120 120 160 ( °C ) Ambient temperature T a BE(sat) C −100 / −10 25°C = −25° −1 75°C − 0.1 − 0.01 − 0.01 − 0.1 −1 − Collector current I C I ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...