se2523bu SiGe Semiconductor, se2523bu Datasheet - Page 5

• Manufacturer Part Number: se2523bu
• Description: 2.4 Ghz Power Amplifier With Power Detector
• Manufacturer: SiGe Semiconductor

Power Detector
Detector Slope Selection
Conditions: V
Positive Slope
Conditions: V
Negative Slope
Conditions: V
192-DST-01 Rev 1.2 Apr-12-2006
Symbol
Symbol
VDET
VDET
VDET
VDET
VDET
VDET
PDR
PDR
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
0
6
Open Circuit
SLOPE
Ground
Negative Slope Power Detector Characteristic
8
P
Detector voltage
Detector voltage
Detector voltage
P
Detector voltage
Detector voltage
Detector voltage
board, unless otherwise noted
Semiconductor’s SE2523BU-EV1 evaluation board, unless otherwise noted
SE2523BU-EV1 evaluation board, unless otherwise noted
OUT
OUT
CC
CC
CC
10
SEL
= V
= V
= V
detect range
detect range
EN
EN
EN
12
Figure 3: SE2523BU Internal Coupled Power Detector Characteristic
Parameter
Parameter
Output Pow er (dBm )
= 3.3 V, f = 2.45 GHz, SLOPE
= 3.3 V, f = 2.45 GHz, SLOPE
= 3.3 V, T
14
16
A
Detector Slope
18
= 25 °C, as measured on SiGe Semiconductor’s SE2523BU-EV1 evaluation
Negative
Positive
20
P
P
P
P
P
P
22
OUT
OUT
OUT
OUT
OUT
OUT
24
= 23 dBm
= 18.5 dBm
= NO RF
= 23 dBm
= 18.5 dBm
= NO RF
Conditions
Conditions
SEL
SEL
= Open Circuit, T
= GND, T
2.4 GHz Power Amplifier with Power Detector
1.2
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
0
6
A
= 25 °C, as measured on SiGe Semiconductor’s
8
Postive Slope Power Detector Charastic
A
10
= 25 °C, as measured on SiGe
Min.
0.98
0.64
0.25
Min.
0.08
0.43
0.89
0
0
12
Output Pow er (dBm )
14
Typ.
1.10
0.75
0.30
Typ.
0.20
0.55
0.94
-
-
16
18
1.22
0.86
0.35
0.32
0.67
1.00
P
P
Max.
Max.
1dB
1dB
SE2523BU
20
Preliminary
22
dBm
dBm
Unit
Unit
5 of 12
V
V
V
V
V
V
24