se2597l SiGe Semiconductor, se2597l Datasheet - Page 4

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se2597l

Manufacturer Part Number
se2597l
Description
2.4 Ghz Power Amplifier With Power Detector Preliminary Information
Manufacturer
SiGe Semiconductor
Datasheet

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AC Electrical Characteristics
802.11b/g AC Electrical Characteristics
Conditions: V
DST-00211 Rev 1.1 Aug-25-2008
Symbol
VSWR
POUT
ACPR
STAB
ΔS
P
t
f
S
r
2f
3f
L-U
1dB
, t
21
21
f
Frequency Range
Output Power
Output 1dB compression point
Small Signal Gain
Gain Variation over band
Adjacent Channel Power Ratio
Harmonic
Rise and Fall Time
Stability
Tolerance to output load
mismatching
EV1 evaluation board, unless otherwise noted
CC
±11 MHz offsets from carrier
±22 MHz offsets from carrier
= V
CC3
Parameter
= V
EN
= 3.3 V, f = 2.45 GHz, T
54 Mbps OFDM signal,
64 QAM, 3% EVM
No modulation
P
P
f
P
Mbps CCK signal, BT =
0.45
P
P
Mbps OFDM signal, 64
QAM VSWR = 6:1 All
Phases
P
Mbps OFDM signal, 64
QAM VSWR = 10:1 All
Phases
IN
IN
IN
OUT
OUT
OUT
OUT
= 2400 to 2500 MHz
= -25 dBm
= -25 dBm,
Confidential
= 23 dBm, 11
= 23 dBm, CW
= 23 dBm, 54
= 23 dBm, 54
Conditions
A
= 25 °C, as measured on SiGe Semiconductor’s SE2597L-
2.4 GHz Power Amplifier with Power Detector
-
-
All non-harmonically related outputs less
2400
Min.
24.5
26
-
-
-
-
-
-
-
than -50 dBc/100 kHz
Preliminary Information
Typ.
26.5
-33
-52
-50
-50
0.5
19
28
1
-
No damage
2500
Max.
34
-
-
-
-
-
-
-
-
SE2597L
dBm/MHz
dBm/MHz
µSec
MHz
dBm
dBm
Unit
dBc
dB
dB
4 of 10

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