k4t56083qf Samsung Semiconductor, Inc., k4t56083qf Datasheet - Page 26

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k4t56083qf

Manufacturer Part Number
k4t56083qf
Description
256mb F-die Ddr2 Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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256Mb F-die DDR2 SDRAM
31. Input waveform timing is referenced from the input signal crossing at the V
for a falling signal applied to the device under test.
32. Input waveform timing is referenced from the input signal crossing at the V
for a falling signal applied to the device under test.
33. tWTR is at lease two clocks (2 * tCK) independent of operation frequency.
34. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the input
signal crossing at the VIH(ac) level to the single-ended data strobe crossing VIH/L(dc) at the start of its tran-
sition for a rising signal, and from the input signal crossing at the VIL(ac) level to the single-ended data strobe
crossing VIH/L(dc) at the start of its transition for a falling signal applied to the device under test. The DQS
signal must be monotonic between Vil(dc)max and Vih(dc)min.
35. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the input
signal crossing at the VIH(dc) level to the single-ended data strobe crossing VIH/L(ac) at the end of its transi-
tion for a rising signal, and from the input signal crossing at the VIL(dc) level to the single-ended data strobe
crossing VIH/L(ac) at the end of its transition for a falling signal applied to the device under test. The DQS
signal must be monotonic between Vil(dc)max and Vih(dc)min.
36. tCKEmin of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE
must remain at the valid input level the entire time it takes to achieve the 3 clocks of registeration. Thus, after
any cKE transition, CKE may not transitioin from its valid level during the time period of tIS + 2*tCK + tIH.
CK
CK
tIS
tIH
Page 26 of 27
tIS
tIH
IH(dc)
IH(ac)
level for a rising signal and V
level for a rising signal and V
V
V
V
V
V
V
V
DDQ
IH(ac)
IH(dc)
REF(dc)
IL(dc)
IL(ac)
SS
Rev. 1.5 Feb. 2005
DDR2 SDRAM
max
max
min
min
IL(dc)
IL(ac)

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