k4d28163hd Samsung Semiconductor, Inc., k4d28163hd Datasheet
k4d28163hd
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k4d28163hd Summary of contents
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... K4D28163HD 128Mbit DDR SDRAM Double Data Rate Synchronous DRAM Samsung Electronics reserves the right to change products or specification without notice 16Bit x 4 Banks Revision 1.4 August 2002 - 1 - 128M DDR SDRAM Rev. 1.4(Aug. 2002) ...
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... K4D28163HD Revision History Revision 1.4 (August 13, 2002) • Changed ICC3P • Typo corrected • Changed refresh period of K4D28163HD-TC36/40 from 4K/64ms to 4K/32ms. Revision 1.3 (May 29, 2002) • Added K4D28163HD-TC36 (275MHz) Revision 1.2 (May 8, 2002) • Typo corrected Revision 1.1 (January 7, 2002) • Increased Icc2N by 20mA Revision 1.0 (December 22, 2001) • ...
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... GENERAL DESCRIPTION FOR 2M x 16Bit x 4 Bank DDR SDRAM The K4D28163HD is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized 2.097,152 words by 16 bits, fabricated with SAMSUNG extremely high performance up to 1.1GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications ...
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... K4D28163HD PIN CONFIGURATION (Top View) LDQS AP/A PIN DESCRIPTION CK,CK Differential Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe CAS Column Address Strobe W E Write Enable LDQS,UDQS Data Strobe LDM,UDM Data Mask RFU Reserved for Future Use ...
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... K4D28163HD INPUT/OUTPUT FUNCTIONAL DESCRIPTION Symbol Type CK, CK*1 Input CKE Input CS Input RAS Input CAS Input WE Input LDQS,(U)DQS Input/Output LDM,UDM Input Input/Output Input Input Power Supply Power Supply DDQ SSQ V Power Supply REF ...
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... K4D28163HD BLOCK DIAGRAM (2Mbit x 16I Bank) Bank Select CK,CK ADDR LCKE LRAS LCBR CK,CK CKE 16 Intput Buffer CK, CK Data Input Register Serial to parallel 2Mx16 2Mx16 2Mx16 2Mx16 Column Decoder Latency & Burst Length Programming Register LWE LCAS LWCBR Timing Register CS RAS CAS ...
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... K4D28163HD FUNCTIONAL DESCRIPTION • Power-Up Sequence DDR SDRAMs must be powered up and initialized in a predefined manner to prevent undefined operations. 1. Apply power and keep CKE at low state (All other inputs may be undefined) - Apply VDD before VDDQ . - Apply VDDQ before VREF & VTT 2. Start clock and maintain stable condition for minimum 200us. ...
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... K4D28163HD MODE REGISTER SET(MRS) The mode register stores the data for controlling the various operating modes of DDR SDRAM. It programs CAS latency, addressing mode, burst length, test mode, DLL reset and various vendor specific options to make DDR SDRAM useful for variety of different applications. The default value of the mode register is not defined, therefore the mode register must be written after EMRS setting for proper operation ...
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... K4D28163HD EXTENDED MODE REGISTER SET(EMRS) The extended mode register stores the data for enabling or disabling DLL and selecting output driver strength. The default value of the extended mode register is not defined, therefore the extened mode register must be written after power up for enabling or disabling DLL. The extended mode register is written by assert- ing low on CS, RAS, CAS, WE and high on BA0(The DDR SDRAM should be in all bank precharge with CKE already high prior to writing into the extended mode register) ...
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... K4D28163HD ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. ...
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... K4D28163HD DC CHARACTERISTICS Recommended operating conditions Unless Otherwise Noted, T Parameter Symbol Operating Current I CC1 (One Bank Active) Precharge Standby Current I P CC2 in Power-down mode Precharge Standby Current I N CC2 in Non Power-down mode Active Standby Current I P CC3 power-down mode Active Standby Current in ...
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... K4D28163HD AC OPERATING TEST CONDITIONS Parameter Input reference voltage for CK(for single ended) CK and CK signal maximum peak swing CK signal minimum slew rate Input Levels Input timing measurement reference level Output timing measurement reference level Output load condition Output CAPACITANCE (V =3.3V Parameter ...
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... K4D28163HD AC CHARACTERISTICS Sym- Parameter bol t CK cycle time CL high level width low level width CL t DQS out access time from CK DQSCK t Output access time from Data strobe edge to Dout edge DQSQ t Read preamble RPRE t Read postamble RPST ...
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... Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM AC CHARACTERISTICS (II) K4D28163HD-TC36 Frequency Cas Latency 275MHz ( 3.6ns ) 3 250MHz ( 4.0ns ) 3 200MHz ( 5.0ns ) 3 166MHz ( 6.0ns ) 3 K4D28163HD-TC40 Frequency Cas Latency 250MHz ( 4.0ns ) 3 200MHz ( 5.0ns ) 3 166MHz ( 6.0ns ) 3 K4D28163HD-TC50 Frequency Cas Latency 200MHz ( 5.0ns ) 3 166MHz ( 6.0ns ) 3 -36 -40 Min Max Min Max ...
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... K4D28163HD K4D28163HD-TC60 Frequency Cas Latency 166MHz ( 6.0ns ) 3 Simplified Timing @ BL CK BAa Da0 Da1 Da2 Da3 COMMAND ACTIVEA WRITEA tRCD tRAS tRC Normal Write Burst ...
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... K4D28163HD PACKAGE DIMENSIONS (66pin TSOP-II) #66 #1 (1.50) (0.71) NOTE REFERENCE ASS ’Y OUT QUALITY #34 #33 22.22 ±0.10 (10×) 0.65TYP 0.30±0.08 0.65±0.08 (10× 128M DDR SDRAM Units : Millimeters (10 ×) (10×) +0.075 0.125 -0.035 0.10 MAX 0.25TYP [ ] 0.075 MAX 0×~8× Rev. 1.4(Aug. 2002) ...