k4d28163hd Samsung Semiconductor, Inc., k4d28163hd Datasheet - Page 10

• Manufacturer Part Number: k4d28163hd
• Description: 128mbit Ddr Sdram
• Manufacturer: Samsung Semiconductor, Inc.

Note :
ABSOLUTE MAXIMUM RATINGS
Note :
POWER & DC OPERATING CONDITIONS(SSTL_2 In/Out)
Recommended operating conditions(Voltage referenced to V
K4D28163HD
Voltage on any pin relative to Vss
Voltage on V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Device Supply voltage
Output Supply voltage
Reference voltage
Termination voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
1. Under all conditions V
2. V
3. V
4. V
5. V
6. For any pin under test input of 0V < V
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
peak noise on the V
and an additional + 25mV for AC noise.
Parameter
REF
tt
I H
IL
of the transmitting device must track V
(max.)= V
(mim.)= -1.5V for a pulse width and it can not be greater than 1/3 of the cycle rate.
DD
DD
is expected to equal 0.50*V
Parameter
supply relative to Vss
supply relative to Vss
DDQ
+1.5V for a pulse width and it can not be greater than 1/3 of the cycle rate.
REF
DDQ
may not exceed + 2% of the DC value. Thus, from 0.50*V
must be less than or equal to V
Symbol
V
V
V
V
V
IH(DC)
V
IL(DC)
V
Vtt
I
DDQ
REF
I
OL
DD
O H
OL
IL
DDQ
of the transmitting device and to track variations in the DC level of the same. Peak to
IN
< V
REF
0.49*V
V
V
DD
Vtt+0.76
REF
REF
3.135
2.375
-0.30
Min
of the receiving device.
V
is acceptable. For all other pins that are not under test V
Symbol
-5
-5
IN
+0.15
-
-0.04
V
T
V
, V
I
P
DDQ
DDQ
STG
OS
DD
D
SS
OUT
=0V, T
- 10 -
DD
.
A
V
=0 to 65 C)
Typ
2.50
3.3
REF
-
-
-
-
-
-
-
V
0.51*V
V
V
DDQ
REF
Vtt-0.76
REF
3.465
2.625
Max
-55 ~ +150
5
5
-0.5 ~ 3.6
-1.0 ~ 3.6
-0.5 ~ 3.6
+0.04
-
+0.30
-0.15
Value
DDQ
DDQ
1.0
50
, V
REF
128M DDR SDRAM
is allowed + 25mV for DC error
Unit
uA
uA
V
V
V
V
V
V
V
V
Rev. 1.4(Aug. 2002)
I N
=0V.
I
I
OL
O H
=+15.2mA
Unit
=-15.2mA
mA
Note
W
V
V
V
C
1
1
2
3
4
5
6
6