k4s160822d Samsung Semiconductor, Inc., k4s160822d Datasheet - Page 19

Manufacturer Part Number

k4s160822d

Description

2mx8 Sdram 1m X 8bit X 2 Banks Synchronous Dram Lvttl

Manufacturer

Samsung Semiconductor, Inc.

Datasheet

1.K4S160822D.pdf (46 pages)

K4S160822D

3. CAS Interrupt (I)

*Note : 1. By " Interrupt", It is meant to stop burst read/write by external command before the end of burst.

DQ(CL2)

DQ(CL3)

1) Read interrupted by Read (BL=4)

2) Write interrupted by Write (BL=2)

CMD

CLK

ADD

CLK

2. t

3. t

By "CAS Interrupt", to stop burst read/write by CAS access ; read and write.

CCD

CDL

: Last data in to new column address delay. (=1CLK)

: CAS to CAS delay. (=1CLK)

tCCD

Note 2

tCCD

tCDL

Note 3

Note 2

Note 1

DQ(CL2)

DQ(CL3)

3) Write interrupted by Read (BL=2)

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tCCD

tCDL

Note 3

Note 2

CMOS SDRAM

Rev. 1.0 (Oct. 1999)