k4h560838h Samsung Semiconductor, Inc., k4h560838h Datasheet - Page 15

• Manufacturer Part Number: k4h560838h
• Description: 256mb H-die Ddr Sdram
• Manufacturer: Samsung Semiconductor, Inc.

18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
K4H560438H
K4H560838H
K4H561638H
DQ/DM/DQS AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Parameter
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Area
Overshoot
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
DDR400
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
Rev. 1.1 January 2006
Specification
DDR333
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
DDR SDRAM
DDR200/266
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V