m368l6423jun Samsung Semiconductor, Inc., m368l6423jun Datasheet - Page 4

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m368l6423jun

Manufacturer Part Number
m368l6423jun
Description
Ddr Sdram Unbuffered Module
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.0 Ordering Information
2.0 Operating Frequencies
3.0 Feature
• V
• V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency : DDR333(2.5 Clock), DDR400(3 Clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1,250 (mil) & single (128MB, 256MB), double (512GB) sided
• SSTL_2 Interface
• All of base components are Lead-Free, Halogen-Free, and RoHS compliant
256MB, 512MB Unbuffered DIMM
66pin TSOP II
DD
DD
: 2.5V ± 0.2V, V
: 2.6V ± 0.1V, V
M368L3223JUS-C(L)CC/B3
M368L6423JUN-C(L)CC/B3
Speed @CL2.5
CL-tRCD-tRP
Speed @CL2
Speed @CL3
Part Number
package
DDQ
DDQ
184Pin Unbuffered DIMM based on 256Mb J-die (x8)
: 2.5V ± 0.2V for DDR333
: 2.6V ± 0.1V for DDR400
Density
256MB
512MB
CC(DDR400@CL=3)
166MHz
200MHz
3-3-3
-
Organization
4 of 17
32M x 64
64M x 64
32Mx8 (K4H560838J) * 8EA
32Mx8 (K4H560838J) * 16EA
Component Composition
Rev. 1.0 November 2007
B3(DDR333@CL=2.5)
133MHz
166MHz
2.5-3-3
-
DDR SDRAM
1,250mil
1,250mil
Height

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