ta4012afe TOSHIBA Semiconductor CORPORATION, ta4012afe Datasheet - Page 2

• Manufacturer Part Number: ta4012afe
• Description: Uhf Wide Band Amplifier Applications
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Caution
equipment are earthed.
RF Test Circuit
Notice
applications for these products.
characteristics (the AC characteristics) of these devices will be affected by the external components which the
customer uses, by the design of the circuit and by various other conditions.
application, and to check the characteristics of the design.
Equivalent Circuit
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and
The circuits and measurements contained in this document are given only in the context of as examples of
Moreover, these example application circuits are not intended for mass production, since the high-frequency
It is the responsibility of the customer to design external circuits which correctly implement the intended
TOSHIBA assume no responsibility for the integrity of customer circuit designs or applications.
Circuit current
Band width
Insertion gain
Noise figure
Isolation
Input return loss
Output return loss
Output power at 1 dB gain compression
Note3:
RF IN
BW is the frequency of 3dB down from ⎪S21⎪
GND
3
Characteristics
10000 pF
1000 pF
100 pF
(top view)
1000 pF
V
CC
1
2
3
1
2
(Ta = 25°C, Zg = Zl = 50 Ω)
L: 4 nh
Symbol
5
4
⎪S21⎪
⎪S12⎪
⎪S11⎪
⎪S22⎪
Po1dB
BW
I
NF
CC
2
2
2
2
5
4
V
V
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
CC
CC
2
2
at 1.5 GHz.
= 2 V, non carrier
= 2 V
= 2 V, f = 1.5 GHz
= 2 V, f = 1.5 GHz
= 2 V, f = 1.5 GHz
= 2 V, f = 1.5 GHz
= 2 V, f = 1.5 GHz
= 2 V, f = 1.5 GHz
L
1000 pF
Test Condition
RF OUT
(Note3)
Min
4.5
1.8
10
⎯
⎯
⎯
⎯
⎯
Typ.
−6.5
−7.5
−22
6.5
2.0
12
6
0
TA4012AFE
2007-11-01
Max
8.5
7.5
⎯
⎯
⎯
⎯
⎯
⎯
dBmW
GHz
Unit
mA
dB
dB
dB
dB
dB