hx6136 Honeywell International's Solid State Electronics Center (SSEC), hx6136 Datasheet

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hx6136

Manufacturer Part Number
hx6136
Description
First-in First-out Memory
Manufacturer
Honeywell International's Solid State Electronics Center (SSEC)
Datasheet
The HX6409, HX6218, and HX6136 are high speed,
low power, first-in first-out memories with clocked read
and write interfaces. The HX6409 is a 4096-word by 9-
bit memory array; the HX6218 is a 2048-word by 18-bit
memory array; and the HX6136 is a 1024-word by 36-
bit memory array. The FIFOs support width expansion
while depth expansion requires external logic control
using state machine techniques. Features include
programmable parity control, an empty/full flag, a
quarter/three quarter full flag, a half full flag and an
error flag.
Honeywell’s FIFOs provide solutions for a wide variety
of data buffering needs, including high-speed data
acquisition,
communications buffering.
Input ports are controlled by a free running clock (CKW)
and a write-enable pin ENW . When
asserted, data is written into the FIFO on the rising
edge of the CKW signal. While ENW
data is continually written into the FIFO on each CKW
cycle.
The output port is controlled in a similar manner by a
freerunning read clock (CKR) and a read enable pin
( ENR ). In addition, the three FIFOs have an output
enable pin ( OE ) and a master reset pin ( MR ). The
read (CKR) and write ( CKW ) clocks may be tied
First-In First-Out Memory
HX6409/HX6218/HX6136
1
FEATURES
1K x 36, 2K x 18, 4K x 9
configurations
Fabricated with RICMOS™ IV
Silicon on Insulator (SOI) 0.8
µm process (Leff = 0.65µm)
Total dose hardness through
1x10
Neutron hardness through
1x10
6
14
rad(Si)
cm
-2
multiprocessor
interfaces,
is held active,
ENW
Dynamic and static transient
upset hardness through 1x10
rad(Si)/s
Dose rate survivability through
1x10
Soft error rate of <1x10
upsets/bit-day
No latchup
Read/write cycle times
Expandable in Width
36 ns (-55° t o 125°C)
11
rad(Si)/s
and
is
together for single-clock operation or the two clocks
may be run independently for asynchronous read/write
applications. Clock frequencies up to 28 MHz are
achievable in the three configurations.
Honeywell’s enhanced SOI RICMOS™ IV (Radiation
Insensitive CMOS) technology is radiation hardened
through the use of advanced and proprietary design,
layout and process hardening techniques. The FIFO is
fabricated
technology, and is designed for use in systems
operating
RICMOS™ IV process is a 5-volt, SOI CMOS
technology with a 150 Å gate oxide and a minimum
drawn feature size of 0.8µm, (0.65µm effective gate
length—L
plugs, Honeywell’s proprietary SHARP planarization
process, and a lightly doped drain (LDD) structure.
-10
eff
9
). Additional features include tungsten via
in
with
radiation
Honeywell’s
Empty, full, half full, 1/4 full,
Parity generation/checking
Fully asynchronous with
Output enable (OE)
CMOS or TTL compatible I/O
Single 5V ± 1 0% power supply
Various flat pack options
www.honeywell.com/radhard
¾ full, error flags
simultaneous read and write
operation
environments.
radiation-hardened
The
SOI

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hx6136 Summary of contents

Page 1

... The HX6409 is a 4096-word by 9- bit memory array; the HX6218 is a 2048-word by 18-bit memory array; and the HX6136 is a 1024-word by 36- bit memory array. The FIFOs support width expansion while depth expansion requires external logic control using state machine techniques ...

Page 2

... FIFO – HX6409/HX6218/HX6136 LOGIC BLOCK DIAGRAM FLAG DECODE TABLE EF _Fault TQF State 1 Empty fault (Enabled Read when Empty) 1 Empty 1 Less than or equal to ¼ full 1 Less than or equal to ½ full 0 Greater than ½ ...

Page 3

... FIFO – HX6409/HX6218/HX6136 SIGNAL DEFINITIONS Signal Name I/O Description Data Inputs: Data Inputs are written into the FIFO on the rising edge of CKW when D: 0 – ENW is active and the FIFO is not full. Data Outputs: Data Outputs are read out of the FIFO memory and updated on the Q: 0 – ...

Page 4

... FIFO – HX6409/HX6218/HX6136 RADIATION CHARACTERISTICS Total Ionizing Radiation Dose All FIFO configurations will meet all stated functional and electrical specifications over the entire operating temperature range after the specified total ionizing radiation dose. All electrical and timing performance parameters will remain within specifications after rebound at VDD = 5.5 V and T = 125° ...

Page 5

... FIFO – HX6409/HX6218/HX6136 ABSOLUTE MAXIMUM RATINGS (1) Symbol Parameter VDD Supply Voltage Range (2) VPIN Voltage on Any Pin (2) TSTORE Storage Temperature (Zero Bias) TSOLDER Soldering Temperature (5 seconds) PD Maximum Power Dissipation (3) IOUT DC or Average Output Current VPROT ESD Input Protection Voltage (4) ΘJC Thermal Resistance (Jct-to-Case) ...

Page 6

... FIFO – HX6409/HX6218/HX6136 DC ELECTRICAL CHARACTERISTICS Symbol Test Parameters Input High Voltage VIH Input Low Voltage VIL VOH1 High Output Voltage VOH2 High Output Voltage VOL Low Output Voltage Input Leakage Current II IOZL Output OFF, High Z Current IOZH Standby Power Supply Current (2) ...

Page 7

... FIFO – HX6409/HX6218/HX6136 AC TIMING CHARACTERISTICS (1) Symbol Test Parameter TCKW Write Clock Cycle (6) TCKR Read Clock Cycle TCKH Clock High Read TCKH Clock High Write TCKL Clock Low TA Data Access Time TOH Previous Output Data Hold After Rd High TFH Previous Flag Hold After Rd/Wr High ...

Page 8

... FIFO – HX6409/HX6218/HX6136 AC TIMING WAVEFORMS Figure 1: Write Timing Enabled WR CKW Tsd Data Tsen ENW Flags Tfh Figure 2: Read Timing CKR Toh Data Tsen ENR Flags Tfh 8 Tckw Tckh Tckl Disabled WR Thd Tsen Then Tfh Tfd Tckr Tckh Tckl Enabled RD Disabled RD Ta ...

Page 9

... FIFO – HX6409/HX6218/HX6136 Figure 3. Master Reset Timing MR CKW ENW CKR ENR Data Valid Data HF Other Flags (1) If ENW is held during Master Reset, the parity is disabled. (2) Outputs will be low after time Tohmr unless in parity programming mode. See figure 7. Figure 4: Read Flag Update Timing ...

Page 10

... FIFO – HX6409/HX6218/HX6136 Figure 5: Write Flag Update Timing CKW ENW CKR ENR Flags NOTE: When a flag condition occurs, the full flag is set. The performance of another write requires at least one read, one write clock to reset the full flag and then one enabled write clock ...

Page 11

... FIFO – HX6409/HX6218/HX6136 Figure 7. Parity Programming Mode MR Tscmr CKW ENW Data In Last Word Tohmr Data Out Valid Data TESTER AC TIMING CHARACTERISTICS TTL I/O Configuration 3V Input Levels * 0V * Input rise and fall times <1 ns/V. Output Sense Levels High Z High Z = 2.9V www.honeywell.com/radhard Tsmrp Thrmp Tckh Parity Write ...

Page 12

... FIFO – HX6409/HX6218/HX6136 QUALITY AND RADIATION HARDNESS ASSURANCE Honeywell maintains a high level of product integrity through process control, utilizing statistical process control, a complete “Total Quality Assurance System,” a computer database process performance tracking system and a radiation hardness assurance strategy. The radiation hardness assurance strategy starts with a technology that is resistant to the effects of radiation ...

Page 13

... D14 VDD 6 VDD 18 VSS 7 VSS 19 D13 8 VSS 20 D12 9 VSS 21 D11 10 VDD 22 D10 11 VDD VDD 24 VDD Pin List for HX6136 Pin Signal Pin Signal 1 VSS 23 CKW _Fault TQF 8 30 ...

Page 14

... FIFO – HX6409/HX6218/HX6136 PACKAGING The FIFO is offered in a 32-lead, 68-lead and a 132- lead flat pack, depending on the configuration. These packages are constructed of multilayer ceramic (Al2O3) and features internal power and ground planes. The flat Package Drawing For 6409 (22020651-001) Package Drawing For 6218 (22019075-001) 14 packs also feature non-conductive ceramic tie bars ...

Page 15

... FIFO – HX6409/HX6218/HX6136 Package Drawing for 6136 (22018696-001) ORDERING INFORMATION ORDERING INFORMATION H X 6409 PART NUMBER 6409 = 6218 = Process 6136 = X=SOI Source H=Honeywell (1) Orders may be faxed to 763-954-2051. Please contact our Customer Service Department at 763-954-2888 for further information. (2) Engineering Device description: Parameters are tested from -55 to 125˚ burn-in, no radiation guaranteed ...

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