tpca8108 TOSHIBA Semiconductor CORPORATION, tpca8108 Datasheet - Page 4
tpca8108
Manufacturer Part Number
tpca8108
Description
Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPCA8108.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
−100
−50
−40
−30
−20
−10
−80
−60
−40
−20
100
10
0
0
1
−1
0
0
Common source
Tc = 25°C
Pulse test
Common source
V DS = −10 V
Pulse test
Drain−source voltage V
Gate−source voltage V
−0.2
−1
−10
Drain current I
−0.4
−2
Tc = 100°C
I
I
|Y
D
D
fs
– V
– V
−10
| – I
−55
25
DS
GS
−8
−0.6
D
−3
25
−6
D
−5.5
Tc = 100°C
Common source
Pulse test
GS
(A)
DS
−5
−55
V GS = −3.5 V
−0.8
−4
(V)
(V)
−4.5
−4
−100
−1
−5
4
−100
−1.0
−0.8
−0.6
−0.4
−0.2
−80
−60
−40
−20
100
10
0
0
1
−1
0
0
Common source
Tc = 25°C
V GS = −10 V
Pulse test
−8
−10
−6
−10
Drain-source voltage V
Gate−source voltage V
−4
−1
Drain current I
−5.5
−20
R
−8
−2
V
DS (ON)
I
DS
D
– V
−10
– V
DS
−5
GS
I D = −40A
−12
– I
−3
D
D
GS
DS
(A)
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
V GS = −3.5 V
−16
−4
(V)
(V)
TPCA8108
2008-06-26
−4.5
−4
−100
−20
−5