tpca8108 TOSHIBA Semiconductor CORPORATION, tpca8108 Datasheet - Page 5

• Manufacturer Part Number: tpca8108
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
2.5
3.0
2.0
1.5
1.0
0.5
10
30
25
20
15
10
5
0
−80
0.1
0
0
(1)
(2)
Common source
Pulse test
V GS = −10 V
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
Drain−source voltage V
−40
Ambient temperature Ta (
Case temperature Tc (
40
Capacitance – V
0
1
R
DS (ON)
(1) Device mounted on a
(2) Device mounted on a
t = 10 s
P
I D = −10, −20, −40 A
D
glass-epoxyboard (a) (Note 2a)
glass-epoxyboard (b) (Note 2b)
40
80
– Ta
– Tc
80
DS
10
DS
120
°
C)
°
(V)
C)
120
C iss
C rss
C oss
160
100
160
5
−1000
−100
−1.5
−0.5
−2.5
−10
−80
−60
−40
−20
−1
−3
−2
−1
0
−80
0
0
0
V DS
Common source
I D = −40 A
Tc = 25°C
Pulse test
Drain−source voltage V
−10
0.2
−40
Total gate charge Q
Case temperature Tc (
−5
40
Dynamic input/output
−3
0.4
0
characteristics
V GS
I
−8
DR
V
−16
th
– V
0.6
40
80
– Tc
DS
V DD = −32V
0
0.8
80
g
DS
Common source
Tc = 25°C
Pulse test
Common source
V GS = −10 V
I D = −1mA
Pulse test
V GS = 1 V
120
(nC)
°
C)
(V)
120
1
TPCA8108
2008-06-26
160
160
1.2
−16
−12
−8
−4
0