tpca8108 TOSHIBA Semiconductor CORPORATION, tpca8108 Datasheet - Page 5
tpca8108
Manufacturer Part Number
tpca8108
Description
Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPCA8108.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
10000
1000
100
2.5
3.0
2.0
1.5
1.0
0.5
10
30
25
20
15
10
5
0
−80
0.1
0
0
(1)
(2)
Common source
Pulse test
V GS = −10 V
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
Drain−source voltage V
−40
Ambient temperature Ta (
Case temperature Tc (
40
Capacitance – V
0
1
R
DS (ON)
(1) Device mounted on a
(2) Device mounted on a
t = 10 s
P
I D = −10, −20, −40 A
D
glass-epoxyboard (a) (Note 2a)
glass-epoxyboard (b) (Note 2b)
40
80
– Ta
– Tc
80
DS
10
DS
120
°
C)
°
(V)
C)
120
C iss
C rss
C oss
160
100
160
5
−1000
−100
−1.5
−0.5
−2.5
−10
−80
−60
−40
−20
−1
−3
−2
−1
0
−80
0
0
0
V DS
Common source
I D = −40 A
Tc = 25°C
Pulse test
Drain−source voltage V
−10
0.2
−40
Total gate charge Q
Case temperature Tc (
−5
40
Dynamic input/output
−3
0.4
0
characteristics
V GS
I
−8
DR
V
−16
th
– V
0.6
40
80
– Tc
DS
V DD = −32V
0
0.8
80
g
DS
Common source
Tc = 25°C
Pulse test
Common source
V GS = −10 V
I D = −1mA
Pulse test
V GS = 1 V
120
(nC)
°
C)
(V)
120
1
TPCA8108
2008-06-26
160
160
1.2
−16
−12
−8
−4
0