tpca8108 TOSHIBA Semiconductor CORPORATION, tpca8108 Datasheet - Page 3

• Manufacturer Part Number: tpca8108
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
SW
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
V
I
I
V
V
V
V
Duty ≤ 1%, t
V
I
I
D
D
D
DR
GS
GS
DS
DS
GS
DS
DS
DD
= −10 mA, V
= −10 mA, V
= −40 A
3
−10 V
= −40 A, V
(Ta = 25°C)
= ±16 V, V
= −40 V, V
= −10 V, I
= −10 V, I
= −10 V, I
= −10 V, V
≈ −32 V, V
0 V
Test Condition
Test Condition
w
= 10 μs
D
D
D
GS
GS
GS
DS
GS
GS
GS
= −1 mA
= −20 A
= −20 A
⎯
= 0 V
= 0 V
= 20 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −10 V,
I
D
V
DD
= −20A
≈ −20 V
Output
−1.5
Min
−40
−20
Min
21
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
4820
Typ.
Typ.
570
750
141
100
7.7
41
12
26
39
22
32
44
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCA8108
2008-06-26
−120
−3.0
Max
Max
±10
−10
9.5
1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
μA
μA
pF
ns
V
V
S
A
V