hat2268c Renesas Electronics Corporation., hat2268c Datasheet

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hat2268c

Manufacturer Part Number
hat2268c
Description
Silicon N Channel Mos Fet Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
hat2268c-EL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
HAT2268C
Silicon N Channel MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - Drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Rev.2.00 Feb 28, 2006 page 1 of 6
Low on-resistance
R
Low drive current.
High density mounting
4.5 V gate drive devices.
DS(on)
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm)
= 27 m typ. (at V
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
10 s, duty cycle
Item
GS
Indexband
= 10 V)
1%
6
5
4
1
2
3
I
D
(pulse)
Pch
Symbol
V
V
Tstg
Tch
I
DSS
GSS
I
DR
D
Note 2
Note1
G
6
D
2
D
3
D
4
–55 to +150
+20 / –10
Ratings
D
S
5
1
900
150
30
16
4
4
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
REJ03G1354-0200
Feb 28, 2006
Unit
(Ta = 25°C)
W
V
V
A
A
A
C
C
Rev.2.00

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hat2268c Summary of contents

Page 1

... HAT2268C Silicon N Channel MOS FET Power Switching Features Low on-resistance typ. ( DS(on) GS Low drive current. High density mounting 4.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage ...

Page 2

... HAT2268C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leak current Drain to Source leak current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time ...

Page 3

... HAT2268C Main Characteristics Power vs. Temperature Derating 1.6 Test Condition : When using the glass epoxy board (FR4 1.6 mm 25°C 1.2 0.8 0 100 Ambient Temperature Typical Output Characteristics 5 4 Drain to Source Voltage V Drain to Source Saturation Voltage vs. Gate to Source Voltage ...

Page 4

... HAT2268C Static Drain to Source on State Resistance vs. Temperature 100 – Case Temperature Dynamic Input Characteristics Gate Charge Qg (nc) Reverse Drain Current vs. Source to Drain Voltage ...

Page 5

... HAT2268C Switching Time Test Circuit Vin Monitor D.U.T. 4.7 Ω Vin 10 V Rev.2.00 Feb 28, 2006 page Vout Monitor Vin R L Vout d(on) Waveform 90% 10% 10% 10% 90% 90 d(off ...

Page 6

... A-A Section Ordering Information Part Name HAT2268C-EL-E 3000 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Feb 28, 2006 page RENESAS Code Previous Code MASS[Typ.] ...

Page 7

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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