hat2268c Renesas Electronics Corporation., hat2268c Datasheet
hat2268c
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hat2268c Summary of contents
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... HAT2268C Silicon N Channel MOS FET Power Switching Features Low on-resistance typ. ( DS(on) GS Low drive current. High density mounting 4.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage ...
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... HAT2268C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leak current Drain to Source leak current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time ...
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... HAT2268C Main Characteristics Power vs. Temperature Derating 1.6 Test Condition : When using the glass epoxy board (FR4 1.6 mm 25°C 1.2 0.8 0 100 Ambient Temperature Typical Output Characteristics 5 4 Drain to Source Voltage V Drain to Source Saturation Voltage vs. Gate to Source Voltage ...
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... HAT2268C Static Drain to Source on State Resistance vs. Temperature 100 – Case Temperature Dynamic Input Characteristics Gate Charge Qg (nc) Reverse Drain Current vs. Source to Drain Voltage ...
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... HAT2268C Switching Time Test Circuit Vin Monitor D.U.T. 4.7 Ω Vin 10 V Rev.2.00 Feb 28, 2006 page Vout Monitor Vin R L Vout d(on) Waveform 90% 10% 10% 10% 90% 90 d(off ...
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... A-A Section Ordering Information Part Name HAT2268C-EL-E 3000 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Feb 28, 2006 page RENESAS Code Previous Code MASS[Typ.] ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...