hat2268c Renesas Electronics Corporation., hat2268c Datasheet - Page 3

• Manufacturer Part Number: hat2268c
• Description: Silicon N Channel Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2268C
Main Characteristics
Rev.2.00 Feb 28, 2006 page 3 of 6
400
300
200
100
1.6
1.2
0.8
0.4
20
16
12
8
4
0
0
0
Drain to Source Saturation Voltage vs.
I
Drain to Source Voltage V
Test Condition :
D
Gate to Source Voltage V
Power vs. Temperature Derating
Ambient Temperature
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm), Ta = 25°C
Typical Output Characteristics
= 1 A
10 V
4.3 V
2
Gate to Source Voltage
5.0 V
2
50
4
4
2 A
100
4 A
6
6
Pulse Test
V
150
Pulse Test
GS
Ta (°C)
8
8
GS
4.0 V
DS
= 2.7 V
3.7 V
3.0 V
3.5 V
3.3 V
(V)
(V)
200
10
10
0.001
0.01
100
100
0.1
Static Drain to Source on State Resistance
10
16
12
10
20
0.01
8
4
1
1
0.1
0
Ta = 25°C, 1shot pulse
When using the FR4 board.
Operation in this area
is limited by R
Drain to Source Voltage V
V
Pulse Test
Gate to Source Voltage V
Typical Transfer Characteristics
DS
Maximum Safe Operation Area
= 10 V
Tc = 75°C
1
0.1
Drain Current I
V
vs. Drain Current
25°C
GS
1
DS(on)
= 10 V
4.5 V
2
1
3
–25°C
10
D
Pulse Test
10
(A)
10 µs
4
GS
DS
(V)
(V)
100
5
100