upa1790g Renesas Electronics Corporation., upa1790g Datasheet - Page 4

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upa1790g

Manufacturer Part Number
upa1790g
Description
Switching N-and P-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet
P-CHANNEL
4
V
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
PG.
= –20
I
CHARACTERISTICS
G
0 V
PG
V
= 2 mA
50
DD
I
D
R
D.U.T.
G
= 25
50
I
AS
D.U.T.
BV
DSS
Starting T
V
R
V
DS
L
DD
L
V
ch
DD
SYMBOL
R
R
V
V
| y
t
t
Q
Q
I
I
DS(on)1
DS(on)2
C
C
GS(off)
C
d(off)
Q
F(S-D)
Q
GSS
d(on)
DSS
t
t
t
oss
GS
GD
rr
fs
iss
rss
r
f
G
rr
|
V
Data Sheet G14320EJ2V0DS
GS
0
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/ s
D
F
F
Duty Cycle
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
DD
GS
PG.
G
( )
= 0.7 A, V
= 0.7 A, V
= –0.7 A
= 1 s
TEST CIRCUIT 2 SWITCHING TIME
= 10
= –60 V, V
= –10 V, I
= –10 V, I
= –10 V
= –30 V, I
= –48 V
= m 16 V, V
= –10 V, I
= –4 V, I
= 0 V
= –10 V
= –10 V
TEST CONDITIONS
R
GS
GS
D
1%
G
D
D
D
D
= –0.35 A
GS
= 0 V
= 0 V
D.U.T.
= –1 mA
= –0.35 A
= –0.35 A
= –0.35 A
DS
= 0 V
= 0 V
R
V
L
DD
V
Wave Form
V
Wave Form
GS
DS
MIN.
–1.0
0.5
V
V
V
DS
GS
0
DS
0
t
10%
( )
( )
d(on)
90%
TYP.
–1.7
0.45
0.74
0.85
230
100
130
0.9
1.9
1.7
7.6
25
30
15
58
t
1
2
on
10%
t
r
V
GS
t
MAX.
d(off)
–2.5
10%
–10
m 10
0.6
1.1
t
off
90%
t
90%
f
UNIT
PA1790
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A

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