upa1814gr-9jg Renesas Electronics Corporation., upa1814gr-9jg Datasheet

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upa1814gr-9jg

Manufacturer Part Number
upa1814gr-9jg
Description
P-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA1814GR-9JG.pdf (8 pages)

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Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
driven directly by a 4 V power source.
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1. PW
The
The PA1814 features a low on-state resistance and
Can be driven by a 4 V power source
Low on-state resistance
R
R
R
Built-in G-S protection diode against ESD
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
PA1814GR-9JG
2. Mounted on ceramic substrate of 5000 mm
PA1814 is a switching device which can be
D13804EJ2V0DS00 (2nd edition)
May 2001 NS CP(K)
= 16 m
= 24 m
= 27 m
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
10 s, Duty Cycle
MAX. (V
MAX. (V
MAX. (V
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note1
Note2
GS
GS
GS
= –10 V, I
= –4.5 V, I
= –4.0 V, I
Power TSSOP8
PACKAGE
1 %
D
D
D
The mark
A
= –3.5 A)
= –3.5 A)
= –3.5 A)
= 25°C)
I
FOR SWITCHING
D(pulse)
V
V
I
D(DC)
T
T
P
DSS
GSS
DATA SHEET
stg
ch
T
shows major revised points.
2
–55 to +150
x 1.1 mm
±7.0
–30
±20
±28
150
MOS FIELD EFFECT TRANSISTOR
2.0
8
1
3.15 ±0.15
3.0 ±0.1
0.27
0.65
°C
°C
W
V
V
A
A
+0.03
–0.08
PACKAGE DRAWING (Unit : mm)
5
4
0.8 MAX.
1, 5, 8
2, 3, 6, 7: Source
4
0.10 M
: Drain
: Gate
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1.2 MAX.
6.4 ±0.2
PA1814
4.4 ±0.1
©
1.0±0.05
0.1±0.05
3
Source
Drain
+5
–3
Body
Diode
0.5
0.6
1.0 ±0.2
1998, 1999
0.25
0.1
+0.15
–0.1

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upa1814gr-9jg Summary of contents

Page 1

P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1814 is a switching device which can be driven directly power source. The PA1814 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4 125 ˚ ˚C 25 ˚ ˚C 15 0 Drain Current - A D DRAIN ...

Page 5

SWITCHING CHARACTERISTICS 1000 td (off) 100 td (on GS(on 0 Drain Current - A D DYNAMIC INPUT CHARACTERISTICS 7.0 ...

Page 6

Data Sheet D13804EJ2V0DS PA1814 ...

Page 7

Data Sheet D13804EJ2V0DS PA1814 7 ...

Page 8

The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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