upa1814gr-9jg Renesas Electronics Corporation., upa1814gr-9jg Datasheet
upa1814gr-9jg
Available stocks
Related parts for upa1814gr-9jg
upa1814gr-9jg Summary of contents
Page 1
P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1814 is a switching device which can be driven directly power source. The PA1814 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...
Page 2
ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...
Page 3
TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ...
Page 4
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4 125 ˚ ˚C 25 ˚ ˚C 15 0 Drain Current - A D DRAIN ...
Page 5
SWITCHING CHARACTERISTICS 1000 td (off) 100 td (on GS(on 0 Drain Current - A D DYNAMIC INPUT CHARACTERISTICS 7.0 ...
Page 6
Data Sheet D13804EJ2V0DS PA1814 ...
Page 7
Data Sheet D13804EJ2V0DS PA1814 7 ...
Page 8
The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...