upa1814gr-9jg Renesas Electronics Corporation., upa1814gr-9jg Datasheet - Page 3

• Manufacturer Part Number: upa1814gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
100
25
10
20
15
80
60
40
20
0
5
1.5
1.0
2.0
0
50
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30
0.2
T
V
T
A
ch
DS
- Ambient Temperature - ˚C
0
- Channel Temperature - ˚C
- Drain to Source Voltage - V
60
0.4
V
GS
50
= 10 V
90
4.5 V
4.0 V
0.6
A
100
120
V
I
= 25 °C)
D
DS
0.8
= 1 mA
= 10 V
150
Data Sheet D13804EJ2V0DS
150
1.0
0.01
0.00001
100
0.0001
0.1
10
0.001
0.01
0.01
1
100
0.01
100
0.1
0.1
10
10
V
0.1
1
1
DRAIN CURRENT
DS
0.5
FORWARD TRANSFER ADMITANCE Vs.
FORWARD TRANSFER CHARACTERISTICS
T
Single Pulse
Mounted on Ceramic
Substrate of 50cm x 1.1mm
FORWARD BIAS SAFE OPERATING AREA
= 10 V
V
A
= 25˚C
DS
= 10 V
T
V
V
A
0.1
DS
GS
= 125˚C
I
D
- Gate to Source Voltage - V
- Drain to Source Voltage - V
(DC)
75˚C
I
1.5
I
D
D
1
(pulse)
2
- Drain Current - A
1
T
A
= 25 ˚C
125˚C
25˚C
75˚C
T
A
2.5
= 25˚C
10
10
25˚C
100
3.5
100
PA1814
3