upa1811 Renesas Electronics Corporation., upa1811 Datasheet - Page 3

• Manufacturer Part Number: upa1811
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

• • • •
TYPICAL CHARACTERISTICS (T
1.2
0.8
0.4
1.4
0.6
1
50
100
12
80
60
40
20
16
4
0
8
0
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
I
D
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Pulsed
DS
= 1 mA
= 10 V
T
ch
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30
T
DS
0.2
0
A
- Channel Temperature - ˚C
- Drain to Source Voltage - V
- Ambient Temperature - ˚C
V
60
GS
0.4
= 10 V
50
90
0.6
4.5 V
A
= 25 C)
100
120
0.8
4.0 V
Data Sheet D11820EJ1V0DS00
150
150
1
0.001
0.01
100
0.01
0.1
100
100
10
0.1
0.1
10
1
1
0.1
10
1
0.1
0
T
Single Pulse
Mounted on Ceramic
Substrate of 5000 mm x 1.1 mm
A
V
V
= 25 ˚C
FORWARD BIAS SAFE OPERATING AREA
DS
DS =
DRAIN CURRENT
FORWARD TRANSFER ADMITTANCE vs.
T
= 10 V
A
TRANSFER CHARACTERISTICS
V
V
= 25 C
GS
DS
10 V
125 C
25 C
75 C
- Drain to Source Voltage - V
- Gate to Sorce Voltage - V
I
D(DC)
I
2
1
D
1
1
- Drain Current - A
I
D(pulse)
10
2
10
PA1811
100
3
100
3