upa1811 Renesas Electronics Corporation., upa1811 Datasheet - Page 4

• Manufacturer Part Number: upa1811
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
150
100
200
120
100
40
10
50
60
20
80
50
40
30
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.1
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
V
V
GS
GS
T
= 2.5 V
= 10 V
A
=
V
125˚C
GS
2
75˚C
25˚C
25˚C
- Gate to Source Voltage - V
I
I
D
D
T
- Drain Current - A
- Drain Current - A
A
1
1
=
125˚C
4
75˚C
25˚C
25˚C
6
10
10
I
D
= 2.0 A
8
Data Sheet D11820EJ1V0DS00
100
100
10
10000
100
1000
20
40
80
60
80
60
40
20
100
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.1
10
50
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
V
I
D
GS
1
= 2.0 A
= 4.0 V
T
V
ch
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
DS
0
I
D
- Channel Temperature -˚C
- Drain to Source Voltage - V
T
- Drain Current - A
A
1
=
125˚C
75˚C
25˚C
25˚C
50
10
V
GS
10
= 2.5 V
C
C
C
100
rss
4.0 V
iss
oss
10 V
V
f = 1 MHz
GS
= 0 V
100
150
PA1811
100