upa1803 Renesas Electronics Corporation., upa1803 Datasheet

upa1803

Manufacturer Part Number

upa1803

Description

N-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1803.pdf (6 pages)

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Document No. G13803EJ3V0DS00 (3rd edition)

Date Published April 2007 NS CP(K)

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

driven directly by a 4.5 V power source.

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

FEATURES

• Can be driven by a 4.5 V power source

• Low on-state resistance

• Built-in G-S protection diode against ESD

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Notes 1. PW ≤ 10

The

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

DS(on)1

DS(on)2

PART NUMBER

PA1803GR-9JG

2. Mounted on ceramic substrate of 5000 mm

PA1803 features a low on-state resistance and

PA1803 is a switching device which can be

= 12 mΩ MAX. (V

= 16 mΩ MAX. (V

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

s, Duty Cycle ≤ 1%

Note1

Note2

= 10 V, I

= 4.5 V, I

Power TSSOP8

PACKAGE

The mark <R> shows major revised points.

= 4.0 A)

D(DC)

D(pulse)

= 25°C)

stg

DSS

GSS

FOR SWITCHING

DATA SHEET

−55 to +150

x 1.1 mm

±8.0

MOS FIELD EFFECT TRANSISTOR

±20

±32

150

2.0

3.15 ±0.15

3.0 ±0.1

0.27

0.65

°C

PACKAGE DRAWING (Unit : mm)

+0.03

–0.08

0.8 MAX.

0.10 M

1, 5, 8

2, 3, 6, 7: Source

: Drain

: Gate

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1.2 MAX.

6.4 ±0.2

PA1803

4.4 ±0.1

1.0±0.05

0.1±0.05

3°

+5°

–3°

Source

Drain

Body

Diode

0.5

0.6

1998, 1999

1.0 ±0.2

0.25

0.1

+0.15

–0.1

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upa1803 Summary of contents

Page 1

N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION μ The PA1803 is a switching device which can be driven directly by a 4.5 V power source. μ The PA1803 features a low on-state resistance and excellent switching characteristics, and is suitable for ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current <R> Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...

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upa1803 Renesas Electronics Corporation., upa1803 Datasheet

upa1803

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