upa1803 Renesas Electronics Corporation., upa1803 Datasheet - Page 5

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upa1803

Manufacturer Part Number
upa1803
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.01
100
0.1
10
1
0.4
V
GS
V
= 0 V
F(S-D)
0.6
1000
- Source to Drain Voltage - V
0.1
100
10
0.001
1
Mounted on ceramic
Board of 5000 mm
Single Pulse
0.8
0.01
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1.0
2
x 1.1 mm
Data Sheet G13803EJ3V0DS
0.1
1.2
PW - Pulse Width - s
1
12
10
0
8
6
4
2
10
I
D
= 8.0 A
DYNAMIC INPUT CHARACTERISTICS
R
5
th(ch-A)
V
10
DD
= 62.5 °C/W
100
Q
= 24 V
G
15 V
- Gate Charge - nC
15
6 V
20
1000
25
30
35
μ
PA1803
40
5

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