upa1854 Renesas Electronics Corporation., upa1854 Datasheet

upa1854

Manufacturer Part Number

upa1854

Description

P-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1854.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

driven directly by a 2.5

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

FEATURES

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Notes 1. PW

The

The PA1854 features a low on-state resistance and

Can be driven by a 2.5-V power source

Low on-state resistance

Built-in G-S protection diode against ESD

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

PA1854GR-9JG

2. Mounted on ceramic substrate of 5000 mm

PA1854 is a switching device which can be

D13295EJ2V0DS00 (2nd edition)

May 2001 NS CP(K)

= 60 m

= 70 m

= 105 m

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10 s, Duty Cycle

MAX. (V

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

Note1

V power source.

Note2

= –4.5 V, I

= –4.0 V, I

= –2.5 V, I

D(pulse)

Power TSSOP8

D(DC)

GSS

DSS

stg

PACKAGE

1 %

–55 to +150

= –1.5 A)

The mark

= 25°C)

= –1.5 A)

FOR SWITCHING

–10/+5

m 3.0

–12

150

2.0

DATA SHEET

x 1.1 mm

shows major revised points.

MOS FIELD EFFECT TRANSISTOR

°C

3.15 ±0.15

3.0 ±0.1

Gate1

0.27

Gate

Protection

Diode

0.65

PACKAGE DRAWING (Unit : mm)

+0.03

–0.08

0.8 MAX.

0.10 M

Source1

2, 3 :Source1

6, 7 :Source2

Drain1

EQUIVALENT CIRCUIT

:Drain1

:Gate1

:Gate2

:Drain2

Body

Diode

Gate2

Gate

Protection

Diode

1.2 MAX.

6.4 ±0.2

4.4 ±0.1

PA1854

1.0±0.05

0.1±0.05

–3

Source2

Drain2

1998, 1999

0.5

0.6

1.0 ±0.2

0.25

0.1

Body

Diode

+0.15

–0.1

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