upa1854 Renesas Electronics Corporation., upa1854 Datasheet - Page 3

• Manufacturer Part Number: upa1854
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
100
40
1.5
80
60
20
1.0
0.5
10
15
5
0
0
50
0
V
I
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
D
DS
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
= 1 mA
= 10 V
T
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30
ch
T
0.2
DS
A
0
- Drain to Source Voltage - V
- Channel Temperature - ˚C
- Ambient Temperature - ˚C
V
GS
60
= 4.5 V
0.4
50
90
0.6
4.0 V
A
100
= 25°C)
120
0.8
2.5 V
Data Sheet D13295EJ2V0DS
150
150
1.0
0.00001
0.0001
0.001
0.01
100
0.01
0.01
100
100
0.1
0.1
10
10
0.1
10
1
1
1
0.1
0.01
0
V
Single Pulse
Mounted on Ceramic
Substrate of 50cm x 1.1mm
P
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DS
V
FORWARD BIAS SAFE OPERATING AREA
D
(FET1) : P
DS
= 10 V
= 10 V
TRANSFER CHARACTERISTICS
V
V
T
25 ˚C
GS
DS
A
= 25 ˚C
0.1
- Gate to Source Voltage - V
- Drain to Source Voltage - V
125 ˚C
D
(FET2) = 1:1
I
D
1.0
1
75 ˚C
- Drain Current - A
2
1
10.0
2
10
PA1854
100.0
100
3
3