k6r4008v1c-c Samsung Semiconductor, Inc., k6r4008v1c-c Datasheet - Page 2

• Manufacturer Part Number: k6r4008v1c-c
• Description: 512kx8 Bit High Speed Static Ram 3.3v Operating . Operated At Commercial And Industrial Temperature Ranges.
• Manufacturer: Samsung Semiconductor, Inc.

K6R4008V1C-C/C-L, K6R4008V1C-I/C-P
FEATURES
FUNCTIONAL BLOCK DIAGRAM
• Fast Access Time 10,12,15ns(Max.)
• Low Power Dissipation
Operating
• Single 3.3 0.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
• Three State Outputs
• 2V Minimum Data Retention : L-Ver. only
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
512K x 8 Bit High-Speed CMOS Static RAM
A
A
A
A
A
A
A
A
A
A
CS
WE
OE
- No Clock or Refresh required
Standby (TTL)
0
1
2
3
4
5
6
7
8
9
I/O
1
~I/O
8
(CMOS) : 10mA(Max.)
K6R4008V1C-J : 36-SOJ-400
K6R4008V1C-T : 44-TSOP2-400BF
K6R4008V1C-10 : 155mA(Max.)
K6R4008V1C-12 : 145mA(Max.)
K6R4008V1C-15 : 135mA(Max.)
Clk Gen.
: 60mA(Max.)
Cont.
Data
Gen.
CLK
1.2mA(Max.) L-Ver. only
A
10
A
11
Pre-Charge Circuit
512 x 8 Columns
A
Column Select
Memory Array
12
1024 Rows
I/O Circuit
A
13
A
14
A
15
A
16
A
17
A
18
- 2 -
The K6R4008V1C is a 4,194,304-bit high-speed Static Random
Access Memory organized as 524,288 words by 8 bits. The
K6R4008V1C uses 8 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNG s
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The K6R4008V1C is packaged
in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II.
ORDERING INFORMATION
GENERAL DESCRIPTION
K6R4008V1C-C10/C12/C15
K6R4008V1C-I10/I12/I15
CMOS SRAM
Commercial Temp.
Industrial Temp.
PRELIMINARY
September 2001
Rev 5.0