k6r4008v1c-c Samsung Semiconductor, Inc., k6r4008v1c-c Datasheet - Page 4

• Manufacturer Part Number: k6r4008v1c-c
• Description: 512kx8 Bit High Speed Static Ram 3.3v Operating . Operated At Commercial And Industrial Temperature Ranges.
• Manufacturer: Samsung Semiconductor, Inc.

K6R4008V1C-C/C-L, K6R4008V1C-I/C-P
RECOMMENDED DC OPERATING CONDITIONS*
*
** V
*** V
DC AND OPERATING CHARACTERISTICS*
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*
* Capacitance is sampled and not 100% tested.
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input/Output Capacitance
Input Capacitance
The above parameters are also guaranteed at industrial temperature range.
IL
IH
(Min) = -2.0V a.c(Pulse Width
(Max) = V
Parameter
Parameter
CC
+ 2.0V a.c (Pulse Width
Item
(T
A
=25 C, f=1.0MHz)
Symbol
V
8ns) for I
I
V
I
I
I
SB1
I
LO
CC
SB
OH
LI
OL
8ns) for I
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
20mA.
OL
OH
IN
OUT
IN
Symbol
=8mA
=V
=-4mA
Symbol
V
V
V
V
V
=V
C
C
CC
SS
SS
IH
IL,
CC
IH
IL
20mA
I/O
IN
SS
or OE=V
V
-0.2V or V
to V
IN
to V
=V
CC
IH
CC
CC
or V
IH
-0.2V,
IH
IN
or WE=V
(T
- 4 -
IL,
0.2V
Test Conditions
Test Conditions
-0.3**
A
Min
I
3.0
2.0
=0 to 70 C, Vcc=3.3 0.3V, unless otherwise specified)
OUT
0
V
V
=0mA
I/O
IN
(T
IL
=0V
=0V
A
=0 to 70 C)
Typ
3.3
Com.
Ind.
0
-
-
Norrmal
L-Ver.
MIN
-
-
10ns
12ns
15ns
10ns
12ns
15ns
V
CC
Max
3.6
+0.3***
0.8
0
CMOS SRAM
Max
Min
2.4
-2
-2
8
7
-
-
-
-
-
-
-
-
-
-
PRELIMINARY
September 2001
Max
155
145
135
170
160
150
1.2
0.4
60
10
2
2
-
Unit
V
V
V
V
Unit
pF
pF
Rev 5.0
Unit
mA
mA
V
V
A
A