ao4404 Alpha & Omega Semiconductor, ao4404 Datasheet
ao4404
Available stocks
Related parts for ao4404
ao4404 Summary of contents
Page 1
... AO4404 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4404/L uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance ...
Page 2
... AO4404 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
Page 3
... AO4404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V (Volts) DS Fig 1: On-Region Characteristics =2. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 125° THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED ...
Page 4
... AO4404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =15V DS I =8. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) 100µs limited 1ms 10.0 10ms 0.1s 1.0 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =40°C/W θ ...