ao4448 Alpha & Omega Semiconductor, ao4448 Datasheet

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ao4448

Manufacturer Part Number
ao4448
Description
80v N-channel Mosfet Sdmos Tm
Manufacturer
Alpha & Omega Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4448
Manufacturer:
AOS/ 万代
Quantity:
20 000
Rev 1: Nov 2010
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4448 is fabricated with SDMOS
technology that combines excellent R
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
D
D
B
Parameter
C
D
Top View
C
D
T
T
T
T
A
A
A
A
=25° C
=70° C
=25° C
=70° C
S
C
S
A
A D
SOIC-8
A
S
=25° C unless otherwise noted
G
t ≤ 10s
Steady-State
Steady-State
DS(ON)
Bottom View
TM
trench
with low gate
Symbol
V
V
I
I
I
E
P
T
Symbol
D
DM
AS
www.aosmd.com
J
DS
GS
AS
D
, T
, I
R
R
, E
AR
STG
JA
JL
AR
Product Summary
V
I
R
R
100% UIS Tested
100% R
D
DS
DS(ON)
DS(ON)
(at V
Typ
31
59
16
(at V
(at V
GS
g
=10V)
Tested
GS
GS
Maximum
-55 to 150
=10V)
= 7V)
±25
101
3.1
80
10
70
45
8
2
80V N-Channel MOSFET
G
Max
40
75
24
D
S
80V
10A
< 16m
< 20m
AO4448
SDMOS
Units
Units
° C/W
° C/W
° C/W
mJ
° C
W
V
V
A
A
Page 1 of 6
TM

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ao4448 Summary of contents

Page 1

... General Description The AO4448 is fabricated with SDMOS technology that combines excellent R charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. SOIC-8 Top View Absolute Maximum Ratings T =25° ...

Page 2

... C, using ≤ 10s junction-to-ambient thermal resistance. =150° C. Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. JL =150° C. The SOA curve provides a single pulse ratin g. J(MAX) www.aosmd.com AO4448 Min Typ Max Units =55° ...

Page 3

... Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =10A D 1.0E+01 40 1.0E+00 1.0E-01 125° C 1.0E-02 1.0E-03 1.0E-04 25° C 1.0E-05 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4448 V =5V DS 125° C 25° (Volts =10V GS I =10A = = 100 ...

Page 4

... DS(ON) 10.0 limited 1.0 0.1 T J(Max) T =25°C A 0.0 0.01 100 1000 ( s) A Figure 10: Maximum Forward Biased Safe 0.1 Pulse Width (s) www.aosmd.com AO4448 C iss C oss (Volts) DS Figure 8: Capacitance Characteristics 10 s 100 s 1ms 10ms =150°C 10s DC 0 100 1000 V (Volts) ...

Page 5

... Figure 14: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 25º 800 1000 0 200 Figure 16: Diode Reverse Recovery Time and www.aosmd.com AO4448 100 1000 3 125ºC 2.5 2 25ºC 1.5 1 25ºC 0.5 125º ...

Page 6

... Vdd VDC - Vgs d(on 1 Vds + Vgs Vdd VDC Id - Vgs Diode Recovery Test Circuit & Waveforms Idt Vgs Isd Vdd VDC - Vds www.aosmd.com AO4448 Qg Qgd Charge 90% 10 d(off) t off DSS dI/ Vdd Page ...

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