ao4422al Alpha & Omega Semiconductor, ao4422al Datasheet

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ao4422al

Manufacturer Part Number
ao4422al
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductor
Datasheet
1.AO4422AL.pdf (4 pages)
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4422A uses advanced trench technology to
provide excellent R
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance. Standard
Product AO4422A is Pb-free (meets ROHS & Sony
259 specifications). AO4422AL is a Green Product
ordering option. AO4422A and AO4422AL are
electrically identical.
AO4422A
N-Channel Enhancement Mode Field Effect Transistor
S
S
S
G
A
SOIC-8
DS(ON)
D
D
D
D
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
and low gate charge. This
C
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
t ^ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
G
Symbol
Features
V
I
R
R
R
D
R
DS
DS(ON)
DS(ON)
TJA
TJL
= 11A
D
S
(V) = 30V
< 15m: (V
< 24m: (V
Maximum
-55 to 150
±20
Typ
9.3
2.1
30
11
50
31
59
16
3
(V
GS
GS
GS
= 10V)
= 10V)
= 4.5V)
Max
40
75
24
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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ao4422al Summary of contents

Page 1

... PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4422A is Pb-free (meets ROHS & Sony 259 specifications). AO4422AL is a Green Product ordering option. AO4422A and AO4422AL are electrically identical ...

Page 2

AO4422A Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current ...

Page 3

AO4422A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 4. 10V (Volts) DS Fig 1: On-Region Characteristics =4. ...

Page 4

AO4422A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =11A (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 1ms 10.0 10ms 0.1s 1 ...

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