ma21d382g Panasonic Corporation of North America, ma21d382g Datasheet
ma21d382g
Manufacturer Part Number
ma21d382g
Description
Schottky Barrier Diodes Sbd
Manufacturer
Panasonic Corporation of North America
Datasheet
1.MA21D382G.pdf
(4 pages)
Schottky Barrier Diodes (SBD)
MA21D382G
Silicon epitaxial planar type
For high frequency rectification
Features
Absolute Maximum Ratings T
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: January 2008
I
Low forward voltage V
Large non-repetitive peak forward surge current I
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
Non-repetitive peak forward surge
current
Junction temperature
Storage time
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
F(AV)
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
3. * : t
= 1.5 A rectification is possible
of current from the operating equipment.
*
rr
measurement circuit
Parameter
Parameter
Pulse Generator
(PG-10N)
R
*
s
= 50 Ω
F
Bias Application Unit (N-50BU)
A
a
= 25°C±3°C
a
This product complies with the RoHS Directive (EU 2002/95/EC).
Symbol
Symbol
= 25°C
I
V
I
Wave Form Analyzer
(SAS-8130)
R
F(AV)
V
V
V
T
V
FSM
C
T
I
t
i
RM
stg
rr
R
F1
F2
F3
= 50 Ω
R
j
t
FSM
I
I
I
V
V
I
R
–55 to +150
F
F
F
F
R
R
L
= 0.5 A
= 1.0 A
= 1.5 A
= I
Rating
= 100 W
= 30 V
= 10 V, f = 1 MHz
150
1.5
30
30
30
R
= 100 mA, I
SKH00223AED
Conditions
V
Unit
R
°C
°C
V
V
A
A
rr
= 10 mA,
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
t
Package
Marking Symbol: 4U
Code
Pin Name
SMini2-F2
1: Anode
2: Cathode
I
F
I
R
Output Pulse
F
L
= I
= 100 Ω
Min
R
= 100 mA
t
rr
I
rr
t
0.34
0.38
0.42
Typ
= 10 mA
40
13
Max
0.38
0.42
0.46
100
Unit
mA
pF
ns
V
1
Related parts for ma21d382g
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Silicon Pnp Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Npn Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Pnp Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Pnp Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Pnp Npn Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Npn Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Epitaxial Planar Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Epitaxial Planar Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Variable Output, Low Voltage Operation Shunt Regulator Ic
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Ccd Monochrome Video Camera Signal Processor Ic
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Ccd Video Camera Signal Processor Ics
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Epitaxial Planar Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Epitaxial Planar Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Switching Diodes
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Epitaxial Planar Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
ma21d382g Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA21D382G Silicon epitaxial planar type For high frequency rectification Features 1.5 A rectification is possible F(AV) Low forward voltage V F Large non-repetitive peak forward surge current I ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). MA21D382G MA21D382_ 150°C a 100° 75°C 25°C 10 -20° −1 10 −2 0 0.4 0.8 Forward voltage V (V) F MA21D382_PR(AV)-VR P V R(AV 0.9 1 0.8 0 ...
Page 3
... This product complies with the RoHS Directive (EU 2002/95/EC). SMini2-F2 1.25 ±0.10 0.80 ±0. 0.60 ±0.10 5° +0.02 0.58 − 0.03 +0.10 0.16 − 0.06 SKH00223AED MA21D382G Unit ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...